Joy Jyothish, Jemmis Eluvathingal D
School of Chemistry, Indian Institute of Science Education and Research-Thiruvananthapuram , Kerala, Thiruvananthapuram 695016, India.
Department of Inorganic and Physical Chemistry, Indian Institute of Science , Bangalore 560012, India.
Inorg Chem. 2017 Feb 6;56(3):1132-1143. doi: 10.1021/acs.inorgchem.6b02073. Epub 2017 Jan 11.
In contrast to the increasing family of weak intermolecular interactions in main-group compounds (X-Z···Y, Z = main-group elements), an analysis of the Cambridge Structural Database indicates that electron-saturated (18-electron) transition-metal complexes show reluctance toward weak M bond formation (X-M···Y, M = transition metal). In particular, weak M bonds involving electron-saturated (18-electron) complexes of transition metals with partially filled d-orbitals are not found. We propose that the nature of valence electron density distribution in transition-metal complexes is the primary reason for this reluctance. A survey of the interaction of selected electron-saturated transition-metal complexes with electron-rich molecules (Y) demonstrates the following: shielding the possible σ-hole on the metal center by the core electron density in 3d series, and enhanced electronegativity and relativistic effects in 4d and 5d series, hinders the formation of the M bond. A balance in all the destabilizing effects has been found in the 4d series due to its moderate polarizability and primogenic repulsion from inner core d-electrons. A changeover in the donor-acceptor nature of the metal center toward different types of incoming molecules is also unveiled here. The present study confirms the possibility of M bond as a new supramolecular force in designing the crystal structures of electron-saturated transition-metal complexes by invoking extreme ligand conditions.
与主族化合物中不断增加的弱分子间相互作用家族(X-Z···Y,Z = 主族元素)形成对比的是,对剑桥结构数据库的分析表明,电子饱和(18电子)的过渡金属配合物对形成弱M键(X-M···Y,M = 过渡金属)表现出不情愿。特别是,未发现涉及具有部分填充d轨道的过渡金属的电子饱和(18电子)配合物的弱M键。我们提出,过渡金属配合物价电子密度分布的性质是这种不情愿的主要原因。对选定的电子饱和过渡金属配合物与富电子分子(Y)相互作用的研究表明:3d系列中核心电子密度对金属中心可能的σ-空穴的屏蔽,以及4d和5d系列中增强的电负性和相对论效应,阻碍了M键的形成。由于其适度的极化率和来自内壳层d电子的原初排斥,在4d系列中发现了所有去稳定化效应的平衡。这里还揭示了金属中心对不同类型进入分子的供体-受体性质的转变。本研究通过引入极端配体条件,证实了M键作为一种新的超分子力在设计电子饱和过渡金属配合物晶体结构中的可能性。