Rashidi Mohammad, Taucer Marco, Ozfidan Isil, Lloyd Erika, Koleini Mohammad, Labidi Hatem, Pitters Jason L, Maciejko Joseph, Wolkow Robert A
Department of Physics, University of Alberta, Edmonton, Alberta T6G 2J1, Canada.
National Institute for Nanotechnology, National Research Council of Canada, Edmonton, Alberta T6G 2M9, Canada.
Phys Rev Lett. 2016 Dec 30;117(27):276805. doi: 10.1103/PhysRevLett.117.276805.
Negative differential resistance remains an attractive but elusive functionality, so far only finding niche applications. Atom scale entities have shown promising properties, but the viability of device fabrication requires a fuller understanding of electron dynamics than has been possible to date. Using an all-electronic time-resolved scanning tunneling microscopy technique and a Green's function transport model, we study an isolated dangling bond on a hydrogen terminated silicon surface. A robust negative differential resistance feature is identified as a many body phenomenon related to occupation dependent electron capture by a single atomic level. We measure all the time constants involved in this process and present atomically resolved, nanosecond time scale images to simultaneously capture the spatial and temporal variation of the observed feature.
负微分电阻仍然是一种引人关注但难以实现的功能，迄今为止仅在一些特定应用中有所发现。原子尺度的实体已展现出有前景的特性，但器件制造的可行性要求对电子动力学有比目前更全面的理解。我们使用全电子时间分辨扫描隧道显微镜技术和格林函数输运模型，研究了氢终止硅表面上的一个孤立悬空键。一个稳健的负微分电阻特征被确定为与单个原子能级上依赖占据的电子捕获相关的多体现象。我们测量了该过程中涉及的所有时间常数，并呈现出原子分辨的纳秒时间尺度图像，以同时捕捉所观察特征的空间和时间变化。
