Department of Physics, University of Hamburg, Jungiusstrasse 11, D-20355 Hamburg, Germany.
Department of Chemistry and iNANO, Center for Materials Crystallography, Aarhus University, Langelandsgade 140, DK-8000 Aarhus C, Denmark.
Nat Commun. 2017 Jan 17;8:14074. doi: 10.1038/ncomms14074.
The discovery of high-temperature superconductivity in Fe-based compounds triggered numerous investigations on the interplay between superconductivity and magnetism, and on the enhancement of transition temperatures through interface effects. It is widely believed that the emergence of optimal superconductivity is intimately linked to the suppression of long-range antiferromagnetic (AFM) order, although the exact microscopic picture remains elusive because of the lack of atomically resolved data. Here we present spin-polarized scanning tunnelling spectroscopy of ultrathin FeTeSe (x=0, 0.5) films on bulk topological insulators. Surprisingly, we find an energy gap at the Fermi level, indicating superconducting correlations up to T∼6 K for one unit cell FeTe grown on BiTe, in contrast to the non-superconducting bulk FeTe. The gap spatially coexists with bi-collinear AFM order. This finding opens perspectives for theoretical studies of competing orders in Fe-based superconductors and for experimental investigations of exotic phases in superconducting layers on topological insulators.
铁基化合物中高温超导性的发现引发了大量关于超导性和磁性之间相互作用的研究,并通过界面效应提高了转变温度。人们普遍认为,最优超导性的出现与长程反铁磁(AFM)有序的抑制密切相关,尽管由于缺乏原子分辨数据,确切的微观图景仍然难以捉摸。在这里,我们展示了在体拓扑绝缘体上的超薄 FeTeSe(x=0,0.5)薄膜的自旋极化扫描隧道光谱。令人惊讶的是,我们在费米能级处发现了能隙,这表明在一个单位细胞 FeTe 生长在 BiTe 上时,超导相关性高达 T∼6 K,与非超导的块状 FeTe 形成对比。该能隙与双共线 AFM 有序共存。这一发现为铁基超导体中竞争顺序的理论研究和拓扑绝缘体上超导层中奇异相的实验研究开辟了前景。