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基底诱导的二维金属材料的赝掺杂。

Pseudodoping of a metallic two-dimensional material by the supporting substrate.

机构信息

Institut für Theoretische Physik, Universität Bremen, Otto-Hahn-Allee 1, 28359, Bremen, Germany.

Bremen Center for Computational Materials Science, Universität Bremen, Am Fallturm 1a, 28359, Bremen, Germany.

出版信息

Nat Commun. 2019 Jan 14;10(1):180. doi: 10.1038/s41467-018-08088-8.

Abstract

Charge transfers resulting from weak bondings between two-dimensional materials and the supporting substrates are often tacitly associated with their work function differences. In this context, two-dimensional materials could be normally doped at relatively low levels. Here, we demonstrate how even weak hybridization with substrates can lead to an apparent heavy doping, using the example of monolayer 1H-TaS grown on Au(111). Ab-initio calculations show that sizable changes in Fermi areas can arise, while the transferred charge between substrate and two-dimensional material is much smaller than the variation of Fermi areas suggests. This mechanism, which we refer to as pseudodoping, is associated with non-linear energy-dependent shifts of electronic spectra, which our scanning tunneling spectroscopy experiments reveal for clean and defective TaS monolayer on Au(111). The influence of pseudodoping on the formation of many-body states in two-dimensional metallic materials is analyzed, shedding light on utilizing pseudodoping to control electronic phase diagrams.

摘要

电荷转移源自二维材料与支撑基底之间的弱键合,通常与它们的功函数差异有关。在这种情况下,二维材料可以在相对较低的水平上进行掺杂。在这里,我们以在 Au(111) 上生长的单层 1H-TaS 为例,证明了即使与基底的弱杂化也会导致明显的重掺杂。从头算计算表明,费米面积会发生可观的变化,而基底和二维材料之间转移的电荷远小于费米面积变化所暗示的电荷。我们将这种机制称为赝掺杂,它与电子光谱的非线性能量依赖位移有关,我们的扫描隧道光谱实验揭示了清洁和有缺陷的 TaS 单层在 Au(111)上的情况。分析了赝掺杂对二维金属材料中多体态形成的影响,为利用赝掺杂来控制电子相图提供了思路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8b96/6331619/4d28dd9bde35/41467_2018_8088_Fig1_HTML.jpg

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