da Silva Saimon Filipe Covre, Mardegan Thayná, de Araújo Sidnei Ramis, Ramirez Carlos Alberto Ospina, Kiravittaya Suwit, Couto Odilon D D, Iikawa Fernando, Deneke Christoph
Laboratório Nacional de Nanotecnologia (LNNano/CNPEM), 13083-100, Campinas, SP, Brazil.
Departamento de Física, Universidade Federal de Viçosa, 36570-900, Viçosa, MG, Brazil.
Nanoscale Res Lett. 2017 Dec;12(1):61. doi: 10.1186/s11671-016-1782-1. Epub 2017 Jan 21.
We use a combined process of Ga-assisted deoxidation and local droplet etching to fabricate unstrained mesoscopic GaAs/AlGaAs structures exhibiting a high shape anisotropy with a length up to 1.2 μm and a width of 150 nm. We demonstrate good controllability over size and morphology of the mesoscopic structures by tuning the growth parameters. Our growth method yields structures, which are coupled to a surrounding quantum well and present unique optical emission features. Microscopic and optical analysis of single structures allows us to demonstrate that single structure emission originates from two different confinement regions, which are spectrally separated and show sharp excitonic lines. Photoluminescence is detected up to room temperature making the structures the ideal candidates for strain-free light emitting/detecting devices.
我们采用镓辅助脱氧和局部液滴蚀刻相结合的工艺，制造出长度可达1.2μm、宽度为150nm且具有高形状各向异性的无应变介观GaAs/AlGaAs结构。通过调整生长参数，我们展示了对介观结构尺寸和形态的良好可控性。我们的生长方法产生的结构与周围的量子阱耦合，并呈现出独特的光发射特性。对单个结构的微观和光学分析使我们能够证明，单个结构的发射源自两个不同的受限区域，这两个区域在光谱上是分离的，并显示出尖锐的激子线。在室温下都能检测到光致发光，这使得这些结构成为无应变发光/检测器件的理想候选者。
