对称GaAs/AlGaAs量子点的高温液滴外延

High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots.

作者信息

Bietti Sergio, Basset Francesco Basso, Tuktamyshev Artur, Bonera Emiliano, Fedorov Alexey, Sanguinetti Stefano

机构信息

L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, via Cozzi 53, I-20125, Milano, Italy.

Now at Dipartimento di Fisica, Sapienza Università di Roma, Piazzale A. Moro 5, I-00185, Roma, Italy.

出版信息

Sci Rep. 2020 Apr 16;10(1):6532. doi: 10.1038/s41598-020-62248-9.

DOI:10.1038/s41598-020-62248-9

PMID:32300114

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7162903/

Abstract

We introduce a high-temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects, introduced during the droplet epitaxy fabrication process, which limited its use for single and entangled photon sources for quantum photonics applications. We identify the region in the parameter space which allows quantum dots to self-assemble with the desired emission wavelength and highly symmetric shape while maintaining a high optical quality. The role of the growth parameters during the droplet arsenization is discussed and modeled.

摘要

我们介绍了一种高温液滴外延工艺，该工艺基于对GaAs(111)A表面上液态Ga纳米级液滴砷化动力学的控制。利用高温进行液滴外延量子点的自组装，解决了液滴外延制造过程中引入的与材料缺陷相关的主要问题，这些问题限制了其在量子光子学应用中的单光子和纠缠光子源方面的应用。我们确定了参数空间中的区域，该区域允许量子点以所需的发射波长和高度对称的形状进行自组装，同时保持高光学质量。讨论并模拟了液滴砷化过程中生长参数的作用。