Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló, Spain.
J Phys Chem Lett. 2023 Feb 16;14(6):1395-1402. doi: 10.1021/acs.jpclett.2c03669. Epub 2023 Feb 4.
With the increasing demand for artificially intelligent hardware systems for brain-inspired in-memory and neuromorphic computing, understanding the underlying mechanisms in the resistive switching of memristor devices is of paramount importance. Here, we demonstrate a two-step resistive switching set process involving a complex interplay among mobile halide ions/vacancies (I/V) and silver ions (Ag) in perovskite-based memristors with thin undoped buffer layers. The resistive switching involves an initial gradual increase in current associated with a drift-related halide migration within the perovskite bulk layer followed by an abrupt resistive switching associated with diffusion of mobile Ag conductive filamentary formation. Furthermore, we develop a dynamical model that explains the characteristic - curve that helps to untangle and quantify the switching regimes consistent with the experimental memristive response. This further insight into the two-step set process provides another degree of freedom in device design for versatile applications with varying levels of complexity.
随着人们对基于脑启发的内存和神经形态计算的人工智能硬件系统的需求不断增加，理解忆阻器器件电阻开关背后的基本机制至关重要。在这里，我们展示了一个涉及两步电阻开关置位过程，其中包括钙钛矿基忆阻器中移动卤化物离子/空位（I/V）和银离子（Ag）之间的复杂相互作用，以及薄的无掺杂缓冲层。电阻开关涉及电流的初始逐渐增加，这与钙钛矿体层内的漂移相关卤化物迁移有关，随后是与移动 Ag 导电丝形成的扩散相关的突然电阻开关。此外，我们开发了一个动力学模型，解释了有助于解开和量化与实验忆阻响应一致的开关状态的特征曲线。对两步置位过程的进一步深入了解为具有不同复杂程度的各种应用的器件设计提供了另一个自由度。
