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低能带有效质量的p型半赫斯勒化合物中高热电性能的计算预测。

Computational prediction of high thermoelectric performance in p-type half-Heusler compounds with low band effective mass.

作者信息

Fang Teng, Zheng Shuqi, Zhou Tian, Yan Lei, Zhang Peng

机构信息

State Key Laboratory of Heavy Oil Processing, Department of Materials Science and Engineering, China University of Petroleum, Beijing 102249, People's Republic of China.

School of Space Science and Physics, Shandong University, Weihai 264209, People's Republic of China.

出版信息

Phys Chem Chem Phys. 2017 Feb 8;19(6):4411-4417. doi: 10.1039/c6cp07897d.

DOI:10.1039/c6cp07897d
PMID:28120969
Abstract

Half-Heusler (HH) compounds are important high temperature thermoelectric (TE) materials and have gained ever-increasing popularity. In recent years, p-type FeNbSb-based heavy-band HH compounds have attracted considerable attention with the record-high zT value of 1.5. Here, we use first-principles based methods to predict a very high zT value of 1.54 at 1200 K in p-type RuTaSb alloys. The high band degeneracy and low band effective mass contribute to a high power factor. Although the electrical thermal conductivity is high due to the high carrier mobility and hence electrical conductivity, the total thermal conductivity is moderate because of the low lattice thermal conductivity. The predicted high zT demonstrates that the p-type RuTaSb HH alloys are promising as TE materials for high temperature power generation.

摘要

半赫斯勒(HH)化合物是重要的高温热电(TE)材料,并且越来越受到欢迎。近年来,基于p型FeNbSb的重带HH化合物因其创纪录的1.5的高zT值而备受关注。在此,我们使用基于第一性原理的方法预测p型RuTaSb合金在1200 K时具有1.54的非常高的zT值。高的能带简并度和低的能带有效质量有助于获得高功率因子。尽管由于高载流子迁移率从而具有高电导率,导致电子热导率较高,但由于低的晶格热导率,总热导率适中。预测的高zT表明p型RuTaSb HH合金作为高温发电的TE材料具有前景。

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