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钴铁硼/氧化镁/钴铁硼磁隧道结中的电压诱导磁化动力学。

Voltage-induced magnetization dynamics in CoFeB/MgO/CoFeB magnetic tunnel junctions.

机构信息

Research and Development Group, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo 185-8601, Japan.

Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198, Japan.

出版信息

Sci Rep. 2017 Feb 17;7:42511. doi: 10.1038/srep42511.

DOI:10.1038/srep42511
PMID:28209976
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5314320/
Abstract

Recent progress in magnetic tunnel junctions (MTJs) with a perpendicular easy axis consisting of CoFeB and MgO stacking structures has shown that magnetization dynamics are induced due to voltage-controlled magnetic anisotropy (VCMA), which will potentially lead to future low-power-consumption information technology. For manipulating magnetizations in MTJs by applying voltage, it is necessary to understand the coupled magnetization motion of two magnetic (recording and reference) layers. In this report, we focus on the magnetization motion of two magnetic layers in MTJs consisting of top layers with an in-plane easy axis and bottom layers with a perpendicular easy axis, both having perpendicular magnetic anisotropy. According to rectified voltage (V) measurements, the amplitude of the magnetization motion depends on the initial angles of the magnetizations with respect to the VCMA direction. Our numerical simulations involving the micromagnetic method based on the Landau-Lifshitz-Gilbert equation of motion indicate that the magnetization motion in both layers is induced by a combination of VCMA and transferred angular momentum, even though the magnetic easy axes of the two layers are different. Our study will lead to the development of voltage-controlled MTJs having perpendicular magnetic anisotropy by controlling the initial angle between magnetizations and VCMA directions.

摘要

近年来,具有垂直易轴的磁性隧道结 (MTJ) 在 CoFeB 和 MgO 堆叠结构方面取得了进展,研究表明,由于电压控制磁各向异性 (VCMA),磁动力学会被诱导,这将为未来低功耗信息技术奠定基础。为了通过施加电压来控制 MTJ 中的磁化,有必要了解两个磁性(记录和参考)层的耦合磁化运动。在本报告中,我们专注于由具有平面易轴的顶层和具有垂直易轴的底层组成的 MTJ 中的两个磁性层的磁化运动,这两层都具有垂直各向异性。根据修正电压 (V) 测量,磁化运动的幅度取决于磁化相对于 VCMA 方向的初始角度。我们基于运动方程的 Landau-Lifshitz-Gilbert 方程的基于微磁方法的数值模拟表明,即使两个层的磁易轴不同,两个层中的磁化运动都是由 VCMA 和转移角动量共同诱导的。通过控制磁化和 VCMA 方向之间的初始角度,我们的研究将导致具有垂直各向异性的电压控制 MTJ 的发展。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/16a8/5314320/1c4961575e69/srep42511-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/16a8/5314320/da4406d776a2/srep42511-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/16a8/5314320/ae41931b31cb/srep42511-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/16a8/5314320/7ad81370c114/srep42511-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/16a8/5314320/1c4961575e69/srep42511-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/16a8/5314320/da4406d776a2/srep42511-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/16a8/5314320/ae41931b31cb/srep42511-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/16a8/5314320/7ad81370c114/srep42511-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/16a8/5314320/1c4961575e69/srep42511-f4.jpg

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本文引用的文献

1
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Phys Rev Lett. 2012 May 11;108(19):197203. doi: 10.1103/PhysRevLett.108.197203. Epub 2012 May 9.
2
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Nat Mater. 2010 Sep;9(9):721-4. doi: 10.1038/nmat2804. Epub 2010 Jul 11.
3
Finite electric field effects in the large perpendicular magnetic anisotropy surface Pt/Fe/Pt(001): a first-principles study.大垂直磁各向异性表面Pt/Fe/Pt(001)中的有限电场效应:第一性原理研究
通过电压控制磁各向异性效应的逆效应从磁化振荡产生充电电流。
Sci Adv. 2020 Aug 5;6(32):eabc2618. doi: 10.1126/sciadv.abc2618. eCollection 2020 Aug.
4
Nonreciprocal surface acoustic wave propagation via magneto-rotation coupling.通过磁旋转耦合实现的非互易表面声波传播。
Sci Adv. 2020 Aug 7;6(32):eabb1724. doi: 10.1126/sciadv.abb1724. eCollection 2020 Aug.
5
Demonstration of a pseudo-magnetization based simultaneous write and read operation in a CoFeB/Pb(MgNb)TiO heterostructure.在CoFeB/Pb(MgNb)TiO异质结构中基于伪磁化的同时写入和读取操作的演示。
Sci Rep. 2020 Jul 1;10(1):10791. doi: 10.1038/s41598-020-67776-y.
6
Experimental Demonstration of a Spin Logic Device with Deterministic and Stochastic Mode of Operation.具有确定性和随机操作模式的自旋逻辑器件的实验演示
Sci Rep. 2018 Jul 30;8(1):11405. doi: 10.1038/s41598-018-29601-5.
7
Effect of excitation power on voltage induced local magnetization dynamics in an ultrathin CoFeB film.励磁功率对超薄 CoFeB 薄膜中电压诱导局部磁化动力学的影响。
Sci Rep. 2017 May 24;7(1):2318. doi: 10.1038/s41598-017-02427-3.
Phys Rev Lett. 2009 Jun 19;102(24):247203. doi: 10.1103/PhysRevLett.102.247203. Epub 2009 Jun 18.
4
Giant modification of the magnetocrystalline anisotropy in transition-metal monolayers by an external electric field.外电场对过渡金属单分子层磁晶各向异性的巨大调制
Phys Rev Lett. 2009 May 8;102(18):187201. doi: 10.1103/PhysRevLett.102.187201. Epub 2009 May 5.
5
Surface magnetoelectric effect in ferromagnetic metal films.铁磁金属薄膜中的表面磁电效应。
Phys Rev Lett. 2008 Sep 26;101(13):137201. doi: 10.1103/PhysRevLett.101.137201. Epub 2008 Sep 22.
6
Magnetization vector manipulation by electric fields.通过电场操纵磁化矢量。
Nature. 2008 Sep 25;455(7212):515-8. doi: 10.1038/nature07318.
7
Electric field-induced modification of magnetism in thin-film ferromagnets.电场诱导的薄膜铁磁体磁性改性
Science. 2007 Jan 19;315(5810):349-51. doi: 10.1126/science.1136629.
8
Magneto-optical observation of picosecond dynamics of single nanomagnets.
Nano Lett. 2006 Dec;6(12):2939-44. doi: 10.1021/nl0623457.
9
Multiferroic and magnetoelectric materials.多铁性和磁电材料。
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10
Spin-torque diode effect in magnetic tunnel junctions.磁性隧道结中的自旋扭矩二极管效应。
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