Iglecias Elaine Faga, Freire Laila Gonzales, de Miranda Candeiro George Táccio, Dos Santos Marcelo, Antoniazzi João Humberto, Gavini Giulio
Department of Restorative Dentistry, Faculty of Dentistry, University of São Paulo, São Paulo, Brazil.
Department of Restorative Dentistry, Faculty of Dentistry, University of São Paulo, São Paulo, Brazil.
J Endod. 2017 Apr;43(4):638-642. doi: 10.1016/j.joen.2016.11.027. Epub 2017 Feb 16.
The objective of this study was to assess the presence of voids in mesial root canals of mandibular molar teeth obturated by using the single-cone (SC) and continuous wave of condensation (CWC) obturation techniques, and results were analyzed by using micro-computed tomography.
Twenty-four mandibular molars with fully developed roots and mesial root curvature ranging from 25° to 35° were instrumented by using Reciproc R25 files, and then they were obturated by using the SC and CWC techniques. Specimens were scanned before and after obturation for micro-computed tomography analysis (voxel size, 17.42 μm). After volumetric analysis and tridimensional reconstruction of the root canals, data were analyzed by using analysis of variance and the Tukey test.
No significant differences were observed between the 2 techniques in terms of total percentage volume of voids: CWC = 3.91% ± 0.72%; SC = 6.52% ± 1.16% (P > .05). Only in the cervical third, CWC showed a significantly lower percentage of voids when compared with SC, namely 2.86% ± 0.94% vs 8.00% ± 1.86%, respectively (P < .05).
The percentage volume of voids was similar in the 2 groups and was influenced by the obturation technique only in the cervical third.
本研究的目的是评估使用单锥（SC）和连续波热压充填（CWC）技术充填的下颌磨牙近中根管内空隙的存在情况，并通过显微计算机断层扫描分析结果。
选取24颗牙根完全发育且近中根弯曲度在25°至35°之间的下颌磨牙，使用Reciproc R25锉进行根管预备，然后分别采用SC和CWC技术进行充填。在充填前后对样本进行扫描以进行显微计算机断层扫描分析（体素大小为17.42μm）。在对根管进行体积分析和三维重建后，使用方差分析和Tukey检验对数据进行分析。
在空隙总体积百分比方面，两种技术之间未观察到显著差异：CWC = 3.91% ± 0.72%；SC = 6.52% ± 1.16%（P >.05）。仅在根管颈段，与SC相比，CWC显示出显著更低的空隙百分比，分别为2.86% ± 0.94%和8.00% ± 1.86%（P <.05）。
两组的空隙体积百分比相似，且仅在根管颈段受充填技术影响。
