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通过嵌段共聚物光刻和可逆离子加载控制金属纳米线阵列的分段。

Controlled Segmentation of Metal Nanowire Array by Block Copolymer Lithography and Reversible Ion Loading.

机构信息

Department of Materials Science and Engineering, National Creative Research Initiative Center for Multi-Dimensional Directed Nanoscale Assembly, KAIST, Daejeon, 34141, Republic of Korea.

School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.

出版信息

Small. 2017 May;13(17). doi: 10.1002/smll.201603939. Epub 2017 Feb 20.

DOI:10.1002/smll.201603939
PMID:28218488
Abstract

Spatial arrangement of 1D nanomaterials may offer enormous opportunities for advanced electronics and photonics. Moreover, morphological complexity and chemical diversity in the nanoscale components may lead to unique properties that are hardly anticipated in randomly distributed homogeneous nanostructures. Here, controlled chemical segmentation of metal nanowire arrays using block copolymer lithography and subsequent reversible metal ion loading are demonstrated. To impose chemical heterogeneity in the nanowires generated by block copolymer lithography, reversible ion loading method highly specific for one particular polymer block is introduced. Reversibility of the metal ion loading enables area-selective localized replacement of metal ions in the self-assembled patterns and creates segmented metal nanowire arrays with different metallic components. Further integration of this method with shear aligning process produces high aligned segmented metal nanowire array with desired local chemical compositions.

摘要

一维纳米材料的空间排列可能为先进的电子学和光子学提供巨大的机会。此外,纳米级组件的形态复杂性和化学多样性可能导致独特的性质,这在随机分布的均匀纳米结构中几乎是难以预料的。在这里,使用嵌段共聚物光刻和随后的可逆金属离子负载来控制金属纳米线阵列的化学分段。为了在嵌段共聚物光刻产生的纳米线中引入化学异质性,引入了一种针对特定聚合物嵌段的高度特异的可逆离子负载方法。金属离子负载的可逆性使得能够在自组装图案中选择性地局部取代金属离子,并形成具有不同金属成分的分段金属纳米线阵列。进一步将这种方法与剪切对准工艺集成,可以得到具有所需局部化学成分的高取向分段金属纳米线阵列。

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