IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany.
Nanotechnology. 2017 Mar 1;28(13):135301. doi: 10.1088/1361-6528/aa5ec1. Epub 2017 Feb 27.
We present the nanoheteroepitaxial growth of gallium arsenide (GaAs) on nano-patterned silicon (Si) (001) substrates fabricated using a CMOS technology compatible process. The selective growth of GaAs nano-crystals (NCs) was achieved at 570 °C by MOVPE. A detailed structure and defect characterization study of the grown nano-heterostructures was performed using scanning transmission electron microscopy, x-ray diffraction, micro-Raman, and micro-photoluminescence (μ-PL) spectroscopy. The results show single-crystalline, nearly relaxed GaAs NCs on top of slightly, by the SiO-mask compressively strained Si nano-tips (NTs). Given the limited contact area, GaAs/Si nanostructures benefit from limited intermixing in contrast to planar GaAs films on Si. Even though a few growth defects (e.g. stacking faults, micro/nano-twins, etc) especially located at the GaAs/Si interface region were detected, the nanoheterostructures show intensive light emission, as investigated by μ-PL spectroscopy. Achieving well-ordered high quality GaAs NCs on Si NTs may provide opportunities for superior electronic, photonic, or photovoltaic device performances integrated on the silicon technology platform.
我们展示了在使用 CMOS 技术兼容工艺制造的纳米图案化硅（Si）（001）衬底上的纳米异质外延生长砷化镓（GaAs）。通过 MOVPE 在 570°C 实现了 GaAs 纳米晶体（NCs）的选择性生长。使用扫描透射电子显微镜、X 射线衍射、微拉曼和微光致发光（μ-PL）光谱对生长的纳米异质结构进行了详细的结构和缺陷特性研究。结果表明，在略微受到 SiO 掩模压缩应变的 Si 纳米尖端（NTs）之上生长了单晶、近乎弛豫的 GaAs NCs。由于接触面积有限，与在 Si 上生长的平面 GaAs 薄膜相比，GaAs/Si 纳米结构受益于有限的混合。尽管检测到一些生长缺陷（例如，位错、微/纳米孪晶等），特别是在 GaAs/Si 界面区域，但纳米异质结构显示出强烈的发光，这通过 μ-PL 光谱进行了研究。在 Si NTs 上实现有序高质量 GaAs NCs 可能为在硅技术平台上集成的优越电子、光子或光伏器件性能提供机会。
