Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, Shanxi 041004, China.
Nanoscale. 2017 Jun 1;9(21):7037-7046. doi: 10.1039/c6nr08687j.
Flexible and transparent resistive switching memories are highly desired for the construction of portable and even wearable electronics. Upon optimization of the microstructure wherein an amorphous-nanocrystalline hafnium oxide thin film is fabricated, an all-oxide based transparent RRAM device with stable resistive switching behavior that can withstand a mechanical tensile stress of up to 2.12% is obtained. It is demonstrated that the superior electrical, thermal and mechanical performance of the ITO/HfO/ITO device can be ascribed to the formation of pseudo-straight metallic hafnium conductive filaments in the switching layer, and is only limited by the choice of electrode materials. When the ITO bottom electrode is replaced with platinum metal, the mechanical failure threshold of the device can be further extended.
柔性透明电阻式存储器对于构建便携式甚至可穿戴电子设备非常重要。通过优化微观结构，制备了非晶-纳米晶氧化铪薄膜，得到了一种具有稳定电阻开关性能的全氧化物透明阻变存储器器件，可承受高达 2.12%的机械拉伸应力。结果表明，ITO/HfO/ITO 器件优异的电学、热学和力学性能可归因于在开关层中形成了伪直的金属铪导电细丝，且仅受电极材料选择的限制。当将 ITO 底电极替换为铂金属时，器件的机械失效阈值可以进一步扩展。
