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弯曲对NiO/TiO p-n异质结电阻开关行为的影响。

Bending effect on the resistive switching behavior of a NiO/TiO p-n heterojunction.

作者信息

Cui Hai-Peng, Li Jian-Chang, Yuan Hai-Lin

机构信息

Vacuum and Fluid Engineering Research Center, School of Mechanical Engineering & Automation, Northeastern University Shenyang 110819 PR China

出版信息

RSC Adv. 2018 May 30;8(35):19861-19867. doi: 10.1039/c8ra01180j. eCollection 2018 May 25.

DOI:10.1039/c8ra01180j
PMID:35540998
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9080738/
Abstract

Herein, NiO/TiO heterojunctions were fabricated by sol-gel spin coating on plastic substrates to investigate the effects of bending on resistive switching. The switching mechanism is well explained by the formation and rupture of oxygen-vacancy conducting filaments modulated by the p-n interface. Compared with that of the unbent film, the device ON/OFF ratio is slightly improved after 5000 bending repetitions. Finite element calculations indicate that the tensile stress of 0.79% can lead to the formation of channel cracks. Further charge transport analysis shows that the conducting filaments may cause an incomplete rupture because the bending-induced channel crack permeates through the p-n interface and reduces the local depletion-region width.

摘要

在此，通过溶胶 - 凝胶旋涂法在塑料基板上制备了NiO/TiO异质结，以研究弯曲对电阻开关的影响。通过由p - n界面调制的氧空位导电细丝的形成和断裂，可以很好地解释开关机制。与未弯曲的薄膜相比，经过5000次弯曲循环后，器件的开/关比略有提高。有限元计算表明，0.79%的拉应力会导致通道裂纹的形成。进一步的电荷传输分析表明，导电细丝可能会导致不完全断裂，因为弯曲引起的通道裂纹穿透p - n界面并减小了局部耗尽区宽度。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1fc/9080738/49166519763f/c8ra01180j-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1fc/9080738/52925231c177/c8ra01180j-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1fc/9080738/7ebb08ed0cf6/c8ra01180j-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1fc/9080738/0c7442c44393/c8ra01180j-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1fc/9080738/9ec666e3ae22/c8ra01180j-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1fc/9080738/ede52a56a0d4/c8ra01180j-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1fc/9080738/49166519763f/c8ra01180j-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1fc/9080738/52925231c177/c8ra01180j-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1fc/9080738/7ebb08ed0cf6/c8ra01180j-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1fc/9080738/0c7442c44393/c8ra01180j-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1fc/9080738/9ec666e3ae22/c8ra01180j-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1fc/9080738/ede52a56a0d4/c8ra01180j-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1fc/9080738/49166519763f/c8ra01180j-f6.jpg

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