School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
State Key Laboratory of Silicon Materials, Hangzhou, 310027, P. R. China.
Small. 2017 May;13(18). doi: 10.1002/smll.201604033. Epub 2017 Mar 7.
An effective colloidal process involving the hot-injection method is developed to synthesize uniform nanoflowers consisting of 2D γ-In Se nanosheets. By exploiting the narrow direct bandgap and high absorption coefficient in the visible light range of In Se , a high-quality γ-In Se /Si heterojunction photodiode is fabricated. This photodiode shows a high photoresponse under light illumination, short response/recovery times, and long-term durability. In addition, the γ-In Se /Si heterojunction photodiode is self-powered and displays a broadband spectral response ranging from UV to IR with a high responsivity and detectivity. These excellent performances make the γ-In Se /Si heterojunction very interesting as highly efficient photodetectors.
采用热注射法开发了一种有效的胶体工艺，用于合成由 2D γ-In Se 纳米片组成的均匀纳米花。利用 In Se 在可见光范围内的窄直接带隙和高吸收系数，制备了高质量的 γ-In Se /Si 异质结光电二极管。该光电二极管在光照下表现出高光响应、短的响应/恢复时间和长期耐久性。此外，γ-In Se /Si 异质结光电二极管自供电，并具有从紫外到红外的宽带光谱响应，具有高响应率和探测率。这些优异的性能使 γ-In Se /Si 异质结成为非常有趣的高效光电探测器。
