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各向异性层状 BiTe-InTe 复合材料:通过控制界面密度来调整热电性能。

Anisotropic layered BiTe-InTe composites: control of interface density for tuning of thermoelectric properties.

机构信息

Otto Schott Institute of Materials Research, Friedrich Schiller University Jena, Löbdergraben 32, D-07743 Jena, Germany.

School of Materials Science and Engineering, Harbin Institute of Technology, West Da-Zhi Street 92, 150001 Harbin, China.

出版信息

Sci Rep. 2017 Mar 8;7:43611. doi: 10.1038/srep43611.

DOI:10.1038/srep43611
PMID:28272541
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5341571/
Abstract

Layered (BiIn)Te-InTe (x = 0.075) composites of pronounced anisotropy in structure and thermoelectric properties were produced by zone melting and subsequent coherent precipitation of InTe from a (BiIn)Te (x > 0.075) matrix. Employing solid state phase transformation, the BiTe/InTe interface density was tuned by modifying the driving force for InTe precipitation. The structure-property relationship in this strongly anisotropic material is characterized thoroughly and systematically for the first time. Unexpectedly, with increasing BiTe/InTe interface density, an increase in electrical conductivity and a decrease in the absolute Seebeck coefficient were found. This is likely to be due to electron accumulation layers at the BiTe/InTe interfaces and the interplay of bipolar transport in BiTe. Significantly improved thermoelectric properties of BiTe-InTe composites as compared to the single phase (BiIn)Te solid solution are obtained.

摘要

通过区域熔炼和随后从(BiIn)Te(x>0.075)基体中均匀沉淀 InTe,制备出结构和热电性能具有明显各向异性的层状(BiIn)Te-InTe(x=0.075)复合材料。通过固态相变,通过改变 InTe 沉淀的驱动力来调整 BiTe/InTe 界面密度。首次对这种强各向异性材料的结构-性能关系进行了全面而系统的研究。出乎意料的是,随着 BiTe/InTe 界面密度的增加,发现电导率增加而绝对塞贝克系数减小。这可能是由于 BiTe/InTe 界面处的电子积累层和 BiTe 中的双极输运相互作用所致。与单相(BiIn)Te 固溶体相比,BiTe-InTe 复合材料的热电性能得到显著改善。

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