Tilt-structure and high-performance of hierarchical BiSbTe nanopillar arrays.

The uniquely tilted nanopillar array favorably influence carrier and phonon transport properties. We present an innovative interfacial design concept and a novel tilt-structure of hierarchical BiSbTe nanopillar array comprising unique interfaces from nano-scaled open gaps to coherent grain boundaries, and tilted nanopillars assembled by high-quality nanowires with well oriented growth, utilizing a simple vacuum thermal evaporation technique. The unusual structure BiSbTe nanopillar array with a tilt angle of 45° exhibits a high thermoelectric performance ZT = 1.61 at room temperature. The relatively high ZT value in contrast to that of previously reported BiSbTe materials and the BiSbTe nanopillar array with a tilt angle of 60° or 90° evidently reveals the crucial role of the unique interface and tilt-structure in favorably influencing carrier and phonon transport properties, resulting in a significantly improved ZT value. This method opens a new approach to optimize nano-structure film materials.