Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA.
Department of Physics, The American University in Cairo, Cairo, Egypt.
Science. 2017 Mar 10;355(6329):1058-1062. doi: 10.1126/science.aal2672.
Doping a semiconductor with foreign atoms enables the control of its electrical and optical properties. We transplant the concept of doping to macroscopic photonics, demonstrating that two-dimensional dielectric particles immersed in a two-dimensional epsilon-near-zero medium act as dopants that modify the medium's effective permeability while keeping its effective permittivity near zero, independently of their positions within the host. The response of a large body can be tuned with a single impurity, including cases such as engineering perfect magnetic conductor and epsilon-and-mu-near-zero media with nonmagnetic constituents. This effect is experimentally demonstrated at microwave frequencies via the observation of geometry-independent tunneling. This methodology might provide a new pathway for engineering electromagnetic metamaterials and reconfigurable optical systems.
通过在半导体中掺杂外来原子，可以控制其电学和光学性质。我们将掺杂的概念移植到宏观光子学中，证明了浸入二维介电常数近零介质中的二维介电粒子可以作为掺杂剂，在保持有效介电常数接近零的情况下，改变介质的有效磁导率，而与它们在宿主中的位置无关。通过单个杂质可以调节大体积的响应，包括用非磁性成分工程设计完美磁导体和ε-μ近零介质等情况。这种效应在微波频率下通过观察独立于几何形状的隧道效应得到了实验验证。这种方法可能为电磁超材料和可重构光学系统的工程设计提供新途径。
