Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Sci Rep. 2017 Mar 14;7:44429. doi: 10.1038/srep44429.
As a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance of RRAM is material-dependent, and therefore the materials used must be chosen carefully in order to avoid instabilities and performance degradation caused by the detrimental effects arising from environmental gases and ionizing radiation. In this work, we demonstrate that AlN-based RRAM displays excellent performance and environmental stability, with no significant degradation to the resistance ratio over a 100-cycle endurance test. Moreover, transparent RRAM (TRRAM) based on AlN also performs reliably under four different harsh environmental conditions and 2 MeV proton irradiation fluences, ranging from 10 to 10 cm. These findings not only provide a guideline for TRRAM design, but also demonstrate the promising applicability of AlN TRRAM for future transparent harsh electronics.
作为一种新型的非易失性存储器，阻变随机存取存储器（RRAM）不仅具有优越的电子特性，还具有先进的功能，如透明度和抗辐射能力。然而，RRAM 的环境耐受性取决于材料，因此必须谨慎选择所用材料，以避免环境气体和电离辐射的有害影响导致的不稳定性和性能下降。在这项工作中，我们证明了基于 AlN 的 RRAM 具有出色的性能和环境稳定性，在 100 次循环耐久性测试中，电阻比没有明显下降。此外，基于 AlN 的透明 RRAM（TRRAM）在四种不同的恶劣环境条件和 2 MeV 质子辐照通量（范围为 10 到 10 cm）下也能可靠工作。这些发现不仅为 TRRAM 的设计提供了指导，还展示了 AlN TRRAM 在未来透明苛刻电子产品中的应用前景。
