Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong Seodaemun-gu, Seoul, 120-749, Korea.
ACS Appl Mater Interfaces. 2011 Nov;3(11):4525-30. doi: 10.1021/am201215e. Epub 2011 Nov 1.
We fabricated all-solution processed, fully transparent resistive random access memory (sol-TRRAM) with a configuration of ITO/GaZnO(GZO)/ITO. All layers, including an active layer and top and bottom ITO electrodes, were deposited on a glass substrate by either spin coating or inkjet printing using a sol-gel solution. Our sol-TRRAM was transparent, with 86.5% transmittance at 550 nm. An initial forming process is unnecessary for the production of transparent memory due to the presence of sufficient inherent nonlattice oxygen ions in the solution-processed GZO layer. The sol-TRRAM also showed reasonable bipolar resistance switching with a low operation current (<100 μA) and excellent cycle endurance properties (>300 cycles). The main conduction mechanism during the set process can be explained by the trap-controlled space-charge limited conduction, and the resistance change occurred by the modification of the potential barrier height because of the charge injection by Fowler-Nordheim tunneling.
我们使用 ITO/GaZnO(GZO)/ITO 的结构制造了全溶液处理的、完全透明的电阻式随机存取存储器（sol-TRRAM）。所有层，包括活性层和顶部及底部的 ITO 电极，都通过旋涂或喷墨打印使用溶胶-凝胶溶液沉积在玻璃基底上。我们的 sol-TRRAM 是透明的，在 550nm 处具有 86.5%的透光率。由于溶液处理的 GZO 层中存在足够的固有非晶格氧离子，因此透明存储器的生产不需要初始形成过程。sol-TRRAM 还表现出合理的双极电阻开关，具有低工作电流（<100μA）和出色的循环耐久性（>300 次循环）。设置过程中的主要传导机制可以通过陷阱控制的空间电荷限制传导来解释，而电阻变化是由于福勒-诺德海姆隧道注入电荷导致势垒高度的改变而发生的。
