一种适用于恶劣环境的全透明电阻式存储器。

A Fully Transparent Resistive Memory for Harsh Environments.

作者信息

Yang Po-Kang, Ho Chih-Hsiang, Lien Der-Hsien, Durán Retamal José Ramón, Kang Chen-Fang, Chen Kuan-Ming, Huang Teng-Han, Yu Yueh-Chung, Wu Chih-I, He Jr-Hau

机构信息

Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.

Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA.

出版信息

Sci Rep. 2015 Oct 12;5:15087. doi: 10.1038/srep15087.

DOI:10.1038/srep15087

PMID:26455819

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4601025/

Abstract

A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 10(4) sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments.

摘要

展示了一种基于氧化铪（HfO2）的完全透明电阻式存储器（TRRAM），其具有出色的透明度、电阻切换能力和环境稳定性。在85°C下测量的保持时间超过3×10(4)秒，并且在130次循环测试中未观察到明显降解。与ZnO TRRAM相比，HfO2 TRRAM在诸如高氧分压、高湿度（85°C时相对湿度=90%）、暴露于腐蚀剂和质子辐照等苛刻条件下表现出可靠的性能。此外，以交叉阵列结构制造的HfO2 TRRAM体现了未来高密度存储器应用的可行性。这些发现不仅为未来TRRAM的设计铺平了道路，还证明了HfO2 TRRAM在恶劣环境中具有广阔的应用前景。