Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Université catholique de Louvain, Place du Levant, 3, 1348 Louvain-la-Neuve, Belgium. METS Research Unit, National Engineering School of Sfax, University of Sfax, Rte Soukra Km 4.5, Sfax 3038, Tunisia.
Nanotechnology. 2017 May 5;28(18):184001. doi: 10.1088/1361-6528/aa66a4. Epub 2017 Mar 14.
In this paper, we investigate the recovery of some semiconductor-based components, such as N/P-type field-effect transistors (FETs) and a complementary metal-oxide-semiconductor (CMOS) inverter, after being exposed to a high total dose of gamma ray radiation. The employed method consists mainly of a rapid, low power and in situ annealing mitigation technique by silicon-on-insulator micro-hotplates. Due to the ionizing effect of the gamma irradiation, the threshold voltages showed an average shift of -580 mV for N-channel transistors, and -360 mV for P-MOSFETs. A 4 min double-cycle annealing of components with a heater temperature up to 465 °C, corresponding to a maximum power of 38 mW, ensured partial recovery but was not sufficient for full recovery. The degradation was completely recovered after the use of a built-in high temperature annealing process, up to 975 °C for 8 min corresponding to a maximum power of 112 mW, which restored the normal operating characteristics for all devices after their irradiation.
在本文中，我们研究了一些基于半导体的组件的恢复情况，例如 N/P 型场效应晶体管 (FET) 和互补金属氧化物半导体 (CMOS) 反相器，这些组件在经受高总剂量伽马射线辐射后。所采用的方法主要包括一种快速、低功率和原位退火缓解技术，使用绝缘体上硅微加热盘。由于伽马辐射的电离效应，N 沟道晶体管的阈值电压平均偏移了-580 mV，而 P-MOSFET 的阈值电压平均偏移了-360 mV。对元件进行 4 分钟的双循环退火，加热器温度高达 465°C，最大功率为 38 mW，可确保部分恢复，但不足以完全恢复。使用内置的高温退火工艺，最高可达 975°C 持续 8 分钟，最大功率为 112 mW，可完全恢复所有器件的退化，使其在辐照后恢复正常工作特性。
