Key Lab. for New Type of Functional Materials in Hebei Province, School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.
School of Science, Hebei University of Technology, Tianjin 300401, China.
Sci Rep. 2017 Mar 14;7:44568. doi: 10.1038/srep44568.
Recently, SnO has attracted more and more attention, because it is a bipolar electronic material holding great potential in the design of p-n junction. In this paper, we examine the effect of extrinsic point defects on modifying the electronic and magnetic properties of SnO using density functionals theory (DFT). The surface adatoms considered are B, C, N, O and F with a [He] core electronic configuration. All adatoms are found energetically stable. B, C, N and F adatoms will modify the band gap and introduce band gap states. In addition, our calculations show that N, B and F can introduce stable local magnetic moment to the lattice. Our results, therefore, offer a possible route to tailor the electronic and magnetic properties of SnO by surface functionalization, which will be helpful to experimentalists in improving the performance of SnO-based electronic devices and opening new avenue for its spintronics applications.
最近,SnO 引起了越来越多的关注,因为它是一种双极电子材料,在 p-n 结的设计中具有巨大的潜力。在本文中,我们使用密度泛函理论(DFT)研究了外点缺陷对 SnO 电子和磁性质的影响。考虑的表面吸附原子有 B、C、N、O 和 F,它们具有 [He] 核电子构型。所有的吸附原子都具有能量稳定性。B、C、N 和 F 吸附原子将修饰能带隙并引入能带隙态。此外,我们的计算表明,N、B 和 F 可以向晶格引入稳定的局域磁矩。因此,我们的结果为通过表面功能化来调整 SnO 的电子和磁性质提供了一条可能的途径,这将有助于实验人员提高基于 SnO 的电子器件的性能,并为其自旋电子学应用开辟新的途径。