Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Collaborative Innovation Center of Quantum Matter, Beijing 100190, China.
Sci Rep. 2017 Mar 21;7:45143. doi: 10.1038/srep45143.
One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p-Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.
一个二极管-一个电阻器 (1D1R) 记忆体是一种有效的架构，可以抑制串扰干扰，实现电阻式随机存取记忆体 (RRAM) 的交叉点网络集成。在此，我们设计了一个具有 1D1R 功能的 p-Si/n-ZnO 异质结构。与传统的多层 1D1R 器件相比，其结构和制造技术可以大大简化。通过原位透射电子显微镜 (TEM) 实时观察了导电丝 (CF) 过程的形成/断裂过程，证明了 RS 机制。同时，我们观察到形成的 CF 仅局限于 Si/ZnO pn 结耗尽区的外部，而 CF 的形成并不会降低二极体的性能，这允许 RS 和整流行为共存，揭示了 1D1R 开关模型。此外，通过原位 TEM 特性证实了 CF 由氧空位组成。
