Salev Pavel, Fratino Lorenzo, Sasaki Dayne, Berkoun Rani, Del Valle Javier, Kalcheim Yoav, Takamura Yayoi, Rozenberg Marcelo, Schuller Ivan K
Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA, USA.
Université Paris-Saclay, CNRS Laboratoire de Physique des Solides, 91405, Orsay, France.
Nat Commun. 2021 Sep 17;12(1):5499. doi: 10.1038/s41467-021-25802-1.
Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of a conducting filament parallel to the current flow, is a highly active research topic. Using the magneto-optical Kerr imaging, we found that the opposite type of resistive switching, from a metal into an insulator, occurs in a reciprocal characteristic spatial pattern: the formation of an insulating barrier perpendicular to the driving current. This barrier formation leads to an unusual N-type negative differential resistance in the current-voltage characteristics. We further demonstrate that electrically inducing a transverse barrier enables a unique approach to voltage-controlled magnetism. By triggering the metal-to-insulator resistive switching in a magnetic material, local on/off control of ferromagnetism is achieved using a global voltage bias applied to the whole device.
对具有金属-绝缘体转变特性的材料施加电刺激会引发较大的电阻变化。电阻从绝缘相转变为金属相，通常是通过形成与电流方向平行的导电细丝来实现的，这是一个高度活跃的研究课题。利用磁光克尔成像技术，我们发现了相反类型的电阻转变，即从金属相转变为绝缘相，其发生具有互易的特征空间模式：形成垂直于驱动电流的绝缘势垒。这种势垒的形成导致电流-电压特性中出现异常的N型负微分电阻。我们进一步证明，电诱导横向势垒为电压控制磁性提供了一种独特的方法。通过在磁性材料中触发金属-绝缘体电阻转变，利用施加在整个器件上的全局电压偏置实现了铁磁性的局部开/关控制。
