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采用纳米球光刻和阳极氧化相结合的方法制备柔性有序大孔氧化铝模板。

Fabrication of flexible highly ordered porous alumina templates by combined nanosphere lithography and anodization.

机构信息

Institute of Nuclear Physics, Polish Academy of Sciences, Radzikowskiego 152, 31-342 Kraków, Poland.

出版信息

Nanotechnology. 2017 May 12;28(19):194003. doi: 10.1088/1361-6528/aa68ac. Epub 2017 Mar 23.

DOI:10.1088/1361-6528/aa68ac
PMID:28332486
Abstract

In this work, we propose a new method for the large-scale production of flexible, periodic alumina arrays with well-ordered pores. We show the incorporation of pre-patterning based on polystyrene (PS) nanosphere lithography into an aluminium anodization process. We prepared ordered monolayers of PS spheres with average diameters of (510 ± 10) nm and (430 ± 10) nm on a large area (1.5 × 1.5 cm) of the Si substrate. Next, we deposited a 5 μm aluminium layer on arrays of PS nanospheres using the sputtering technique. After the deposition, we covered the aluminium film with a polymer Scotch adhesive tape, and separated it from the silicon substrate by ultrasonic-assisted lift-off. Finally, we performed the anodization of the aluminium. We compared the pore and cell sizes, and the pore distance for the templates obtained by this technique, with reference to the templates prepared by a two-step anodization process. Using this new approach, we obtained highly ordered hexagonal 2D lattices over a large area of up to 2 cm with sparse defects, amounting to not more than four defects per 1000 μm on average. Here, we show that the use of indentation techniques is not necessary and can be replaced by a fast, cheap and easy pre-patterning step based on nanosphere lithography.

摘要

在这项工作中,我们提出了一种新的方法,用于大规模生产具有有序孔的柔性、周期性氧化铝阵列。我们展示了将基于聚苯乙烯(PS)纳米球光刻的预图案化纳入到铝阳极氧化过程中。我们在 Si 衬底的大面积(1.5×1.5 cm)上制备了具有平均直径为(510±10)nm 和(430±10)nm 的有序 PS 纳米球单层。接下来,我们使用溅射技术在 PS 纳米球阵列上沉积了 5 μm 的铝层。沉积后,我们用聚合物 Scotch 胶带覆盖铝膜,并通过超声辅助剥离将其与硅衬底分离。最后,我们对铝进行了阳极氧化。我们将通过这种技术获得的模板的孔径和孔间距以及孔间距与通过两步阳极氧化工艺制备的模板进行了比较。使用这种新方法,我们在高达 2 cm 的大面积上获得了高度有序的六方 2D 格子,稀疏缺陷少,平均每 1000 μm 不超过四个缺陷。在这里,我们表明使用压痕技术是不必要的,并且可以被基于纳米球光刻的快速、廉价和简单的预图案化步骤所取代。

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