铪掺杂对通过原子层沉积法制备的氧化锌薄膜晶体管态密度的影响。
The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition.
作者信息
Ding Xingwei, Qin Cunping, Song Jiantao, Zhang Jianhua, Jiang Xueyin, Zhang Zhilin
机构信息
Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai, 200070, People's Republic of China.
School of Mechatronics and Automation, Shanghai University, Shanghai, 200072, China.
出版信息
Nanoscale Res Lett. 2017 Dec;12(1):63. doi: 10.1186/s11671-017-1852-z. Epub 2017 Jan 23.
Thin-film transistors (TFTs) with atomic layer deposition (ALD) HfZnO (HZO) as channel layer and AlO as gate insulator were successfully fabricated. Compared with ZnO-TFT, the stability of HZO-TFT was obviously improved as Hf doping can suppress the generation of oxygen related defects. The transfer characteristics of TFTs at different temperatures were also investigated, and temperature stability enhancement was observed for the TFT with Hf doping. The density of states (DOS) was calculated based on the experimentally obtained E , which can explain the experimental observation. A high-field effect mobility of 9.4 cm/Vs, a suitable turn-on voltage of 0.26 V, a high on/off ratio of over 10 and a steep sub-threshold swing of 0.3 V/decade were obtained in HZO-TFT. The results showed that temperature stability enhancement in HfZnO thin-film transistors are attributed to the smaller DOS.
成功制备了以原子层沉积（ALD）的HfZnO（HZO）为沟道层、AlO为栅极绝缘体的薄膜晶体管（TFT）。与ZnO-TFT相比，HZO-TFT的稳定性明显提高，因为Hf掺杂可以抑制与氧相关缺陷的产生。还研究了不同温度下TFT的转移特性，观察到Hf掺杂的TFT的温度稳定性增强。基于实验获得的E计算了态密度（DOS），这可以解释实验观察结果。HZO-TFT获得了9.4 cm²/Vs的高场效应迁移率、0.26 V的合适开启电压、超过10的高开关比和0.3 V/十倍频程的陡峭亚阈值摆幅。结果表明，HfZnO薄膜晶体管中温度稳定性的增强归因于较小的DOS。
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