Mohsin Kaji Muhammad, Srivastava Ashok, Sharma Ashwani K, Mayberry Clay
School of Electrical Engineering and Computer Science, Louisiana State University, Baton Rouge, LA 70803, USA.
Air Force Research Laboratory/Space Electronics Branch, Space Vehicles Directorate, Electronics Foundations Group, 3550 Aberdeen Avenue SE, Kirtland, NM 87117, USA.
Nanomaterials (Basel). 2013 Apr 26;3(2):229-241. doi: 10.3390/nano3020229.
In this work, we have studied Joule heating in carbon nanotube based very large scale integration (VLSI) interconnects and incorporated Joule heating influenced scattering in our previously developed current transport model. The theoretical model explains breakdown in carbon nanotube resistance which limits the current density. We have also studied scattering parameters of carbon nanotube (CNT) interconnects and compared with the earlier work. For 1 µm length single-wall carbon nanotube, 3 dB frequency in S parameter reduces to ~120 GHz from 1 THz considering Joule heating. It has been found that bias voltage has little effect on scattering parameters, while length has very strong effect on scattering parameters.
在这项工作中，我们研究了基于碳纳米管的超大规模集成电路（VLSI）互连中的焦耳热，并将焦耳热影响的散射纳入我们先前开发的电流传输模型。该理论模型解释了限制电流密度的碳纳米管电阻击穿现象。我们还研究了碳纳米管（CNT）互连的散射参数，并与早期工作进行了比较。对于长度为1 µm的单壁碳纳米管，考虑焦耳热时，S参数中的3 dB频率从1 THz降至约120 GHz。研究发现，偏置电压对散射参数影响很小，而长度对散射参数有非常强烈的影响。
