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直流溅射沉积的非晶态和纳米晶态MgO薄膜的磁性

Magnetism of Amorphous and Nano-Crystallized Dc-Sputter-Deposited MgO Thin Films.

作者信息

Mahadeva Sreekanth K, Fan Jincheng, Biswas Anis, Sreelatha K S, Belova Lyubov, Rao K V

机构信息

Department of Materials Science, Tmfy-MSE, The Royal Institute of Technology, Stockholm SE100 44, Sweden.

Department of Physics, Amrita Vishwa Vidyapeetham University, Amritapuri Campus, Kollam, Kerala 690525, India.

出版信息

Nanomaterials (Basel). 2013 Aug 7;3(3):486-497. doi: 10.3390/nano3030486.

Abstract

We report a systematic study of room-temperature ferromagnetism (RTFM) in pristine MgO thin films in their amorphous and nano-crystalline states. The as deposited dc-sputtered films of pristine MgO on Si substrates using a metallic Mg target in an O₂ containing working gas atmosphere of (N₂ + O₂) are found to be X-ray amorphous. All these films obtained with oxygen partial pressure (P₂) ~10% to 80% while maintaining the same total pressure of the working gas are found to be ferromagnetic at room temperature. The room temperature saturation magnetization (M) value of 2.68 emu/cm³ obtained for the MgO film deposited in P₂ of 10% increases to 9.62 emu/cm³ for film deposited at P₂ of 40%. However, the M values decrease steadily for further increase of oxygen partial pressure during deposition. On thermal annealing at temperatures in the range 600 to 800 °C, the films become nanocrystalline and as the crystallite size grows with longer annealing times and higher temperature, M decreases. Our study clearly points out that it is possible to tailor the magnetic properties of thin films of MgO. The room temperature ferromagnetism in MgO films is attributed to the presence of Mg cation vacancies.

摘要

我们报告了对处于非晶态和纳米晶态的原始MgO薄膜室温铁磁性(RTFM)的系统研究。发现在含O₂的(N₂ + O₂)工作气体气氛中使用金属Mg靶在Si衬底上直流溅射沉积的原始MgO薄膜是X射线非晶态的。所有这些在保持工作气体总压力相同的情况下,氧分压(P₂)约为10%至80%时获得的薄膜在室温下都是铁磁性的。在P₂为10%时沉积的MgO薄膜的室温饱和磁化强度(M)值为2.68 emu/cm³,在P₂为40%时沉积的薄膜该值增加到9.62 emu/cm³。然而,在沉积过程中随着氧分压进一步增加,M值稳步下降。在600至800°C范围内进行热退火时,薄膜变成纳米晶,并且随着退火时间延长和温度升高晶粒尺寸增大,M减小。我们的研究清楚地指出,可以调整MgO薄膜的磁性。MgO薄膜中的室温铁磁性归因于Mg阳离子空位的存在。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd9d/5304652/5105ec8e553d/nanomaterials-03-00486-g001.jpg

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