Zhao Lu, Liu Hongxia, Wang Xing, Wang Yongte, Wang Shulong
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China.
Nanomaterials (Basel). 2019 May 4;9(5):697. doi: 10.3390/nano9050697.
Effects of the LaO passivation layer thickness on the interfacial properties of high-k/Ge interface are investigated systematically. In a very thin range (0~15 cycles), the increase of LaO passivation layer deposition cycles improves the surface smoothness of HfO/Ge structures. The capacitance-voltage () characteristics show that the thickness of LaO passivation layer can affect the shift of flat band voltage (), hysteretic behaviors, and the shapes of the dual-swept curves. Moreover, significant improvements in the gate leakage current and breakdown characteristics are also achieved with the increase of LaO interlayer thickness.
系统地研究了LaO钝化层厚度对高k/Ge界面的界面特性的影响。在非常薄的范围内（0~15个循环），LaO钝化层沉积循环次数的增加改善了HfO/Ge结构的表面平整度。电容-电压（）特性表明，LaO钝化层的厚度会影响平带电压（）的偏移、滞后行为以及双扫描曲线的形状。此外，随着LaO中间层厚度的增加，栅极漏电流和击穿特性也有显著改善。
