Wang Xing, Liu Hongxia, Zhao Lu, Fei Chenxi, Feng Xingyao, Chen Shupeng, Wang Yongte
Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China.
Nanoscale Res Lett. 2017 Dec;12(1):233. doi: 10.1186/s11671-017-2018-8. Epub 2017 Mar 29.
LaO films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the LaO films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the LaO films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous LaO films, the crystallized films were observed to be more unstable due to the hygroscopicity of LaO. Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the LaO films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.
通过原子层沉积技术在硅衬底上生长不同厚度的氧化镧（LaO）薄膜。在几个退火温度下进行沉积后快速热退火处理后，通过掠入射X射线衍射分析LaO薄膜的结晶特性。发现LaO薄膜的结晶行为受薄膜厚度和退火温度的影响，这与硅衬底的扩散有关。与非晶LaO薄膜相比，由于LaO的吸湿性，结晶薄膜更不稳定。此外，还分别通过X射线光电子能谱和光谱椭偏仪研究了结晶特性对LaO薄膜带隙和折射率的影响。
