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采用反应磁控溅射法沉积的 La2O3/Si 薄膜的 X 射线光电子能谱深度剖析。

X-ray photoelectron spectroscopy depth profiling of La2O3/Si thin films deposited by reactive magnetron sputtering.

机构信息

Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968, USA.

出版信息

ACS Appl Mater Interfaces. 2011 Nov;3(11):4370-3. doi: 10.1021/am201021m. Epub 2011 Oct 13.

Abstract

The La(2)O(3)/Si thin films have been deposited by reactive DC magnetron sputtering. Amorphous state of La(2)O(3) layer has been shown by RHEED observation. Top surface chemistry of the a-La(2)O(3) has been evaluated with layer-by-layer depth profiling by ion bombardment and XPS measurements. It was found by core level spectroscopy that the top surface of the a-La(2)O(3) film consists of hydrocarbon admixture, lanthanum carbonate, and hydroxides that formed as a result of contact with air atmosphere. Thickness of this top surface modified layer is below 1 nm for a contact time of ~1.5 h with air at normal conditions.

摘要

采用反应直流磁控溅射法沉积了 La(2)O(3)/Si 薄膜。RHEED 观察表明 La(2)O(3)层呈非晶态。采用离子轰击和 XPS 测量的逐层深度剖析评估了 a-La(2)O(3)的顶表面化学性质。通过芯能级光谱发现,a-La(2)O(3)薄膜的顶表面由碳氢化合物杂质、碳酸镧和氢氧化物组成,这些物质是与空气接触形成的。在正常条件下与空气接触约 1.5 小时后,这种顶表面改性层的厚度小于 1nm。

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