Tailoring Thermoelectric Properties through Structure and Morphology in Chemically Synthesized n-Type Bismuth Telluride Nanostructures.

Here, we report a simple, cost-effective, surfactant-assisted, and aqueous-based low-temperature reflux method for the synthesis of BiTe nanocrystals. Thermoelectric properties of n-type bismuth telluride (BT) nanostructures are reported by varying the morphology and crystal structure. Tuning the reaction time from 1 to 36 h enables the phase transformation from BiTe with a hexagonal crystal structure to BiTe with a rhombohedral crystal structure, which is evident from the refined X-ray diffraction results and high-resolution transmission electron microscopy analysis. A perfect stoichiometric balance is achieved for all the compositions, and temperature variation of the electrical resistivity of all BT nanostructures shows the typical metal to semiconducting transition near room temperature. Seebeck coefficient and Hall measurements confirm electrons as the majority carriers and show the typical characteristics of n-type BT nanostructures. The nanocrystals inherited from the optimized reaction conditions and high densification of nanoparticle interfaces contribute to the considerable reduction of thermal conductivity in BT nanostructures. Highly crystalline, uniformly distributed nanocrystals of BiTe formed for 24 h reaction time demonstrate a promising figure of merit of 0.81 at 350 K, which can be attributed to their low thermal conductivity while the high electrical conductivity is maintained. Our research could provide new possibilities in low-temperature synthesis where structural, compositional, and morphological tuning of BT nanostructures could promote practical thermoelectric applications near room temperature.