Baquedano Estela, Martinez Ramses V, Llorens José M, Postigo Pablo A
Instituto de Microelectrónica de Madrid, CSIC, Tres Cantos, 28760 Madrid, Spain.
School of Industrial Engineering, Purdue University, 315 N. Grant Street, West Lafayette, IN 47907, USA.
Nanomaterials (Basel). 2017 May 11;7(5):109. doi: 10.3390/nano7050109.
Soft lithography allows for the simple and low-cost fabrication of nanopatterns with different shapes and sizes over large areas. However, the resolution and the aspect ratio of the nanostructures fabricated by soft lithography are limited by the depth and the physical properties of the stamp. In this work, silicon nanobelts and nanostructures were achieved by combining soft nanolithography patterning with optimized reactive ion etching (RIE) in silicon. Using polymethylmethacrylate (PMMA) nanopatterned layers with thicknesses ranging between 14 and 50 nm, we obtained silicon nanobelts in areas of square centimeters with aspect ratios up to ~1.6 and linewidths of 225 nm. The soft lithographic process was assisted by a thin film of SiO (less than 15 nm) used as a hard mask and RIE. This simple patterning method was also used to fabricate 2D nanostructures (nanopillars) with aspect ratios of ~2.7 and diameters of ~200 nm. We demonstrate that large areas patterned with silicon nanobelts exhibit a high reflectivity peak in the ultraviolet C (UVC) spectral region (280 nm) where some aminoacids and peptides have a strong absorption. We also demonstrated how to tailor the aspect ratio and the wettability of these photonic surfaces (contact angles ranging from 8.1 to 96.2°) by changing the RIE power applied during the fabrication process.
软光刻技术能够在大面积上以简单且低成本的方式制造具有不同形状和尺寸的纳米图案。然而,通过软光刻技术制造的纳米结构的分辨率和纵横比受到印章深度和物理性质的限制。在这项工作中,通过将软纳米光刻图案化与硅中的优化反应离子蚀刻(RIE)相结合,实现了硅纳米带和纳米结构。使用厚度在14至50纳米之间的聚甲基丙烯酸甲酯(PMMA)纳米图案化层,我们在平方厘米的区域内获得了纵横比高达约1.6且线宽为225纳米的硅纳米带。软光刻工艺由用作硬掩膜的SiO薄膜(小于15纳米)和RIE辅助。这种简单的图案化方法还用于制造纵横比约为2.7且直径约为200纳米的二维纳米结构(纳米柱)。我们证明,用硅纳米带图案化的大面积区域在紫外线C(UVC)光谱区域(280纳米)表现出高反射率峰值,其中一些氨基酸和肽具有强烈吸收。我们还展示了如何通过改变制造过程中施加的RIE功率来调整这些光子表面的纵横比和润湿性(接触角范围为8.1至96.2°)。