National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
ACS Appl Mater Interfaces. 2017 May 31;9(21):18127-18133. doi: 10.1021/acsami.7b03785. Epub 2017 May 17.
Ferroelectric organic field-effect transistors (Fe-OFETs) have attracted intensive attention because of their promising potential in nonvolatile memory devices. The quick switching between binary states is a significant fundamental feature in evaluating Fe-OFET memories. Here, we employ 2D molecular crystals via a solution-based process as the conducting channels in transistor devices, in which ferroelectric polymer acts as the gate dielectric. A high carrier mobility of up to 5.6 cm V s and a high on/off ratio of 10 are obtained. In addition, the efficient charge injection by virtue of the ultrathin 2D molecular crystals is beneficial in achieving rapid operations in the Fe-OFETs; devices exhibit short switching time of ∼2.9 and ∼3.0 ms from the on- to the off-state and from the off- to the on-state, respectively. Consequently, the presented strategy is capable of speeding up Fe-OFET memory devices by using solution-processed 2D molecular crystals.
铁电有机场效应晶体管（Fe-OFET）因其在非易失性存储器件中的应用潜力而受到广泛关注。二进制状态之间的快速切换是非易失性 Fe-OFET 存储器的重要基本特性。在本研究中，我们通过溶液处理工艺将二维分子晶体用作晶体管器件中的导电通道，其中铁电聚合物作为栅介质。获得了高达 5.6 cm V s 的高载流子迁移率和高达 10 的高开关比。此外，得益于超薄二维分子晶体的有效电荷注入，有利于在 Fe-OFET 中实现快速操作；器件从导通状态到关断状态和从关断状态到导通状态的开关时间分别约为 2.9 和 3.0 ms。因此，通过使用溶液处理的二维分子晶体，本研究提出的策略能够加快 Fe-OFET 存储器件的速度。
Zotero 插件