Noh Eun-Kyung, Boampong Amos, Konno Yu, Shibasaki Yuji, Lee Jae-Hyun, Choi Yoonseuk, Kim Min-Hoi
Department of Creative Convergence Engineering, Hanbat National University, Yuseong-gu, Daejeon 34158, Korea.
Department of Electronics Engineering, Hanbat National University, Yuseong-gu, Daejeon 34158, Korea.
Materials (Basel). 2021 Mar 8;14(5):1276. doi: 10.3390/ma14051276.
We demonstrated the effect of a buffer layer on the electrical characteristics of ferroelectric polymer capacitors and field-effect transistors. Various polymer materials with a dielectric constant between 2 and 42 were used to form buffer layers with a similar thicknesses, but with different capacitances. In order to evaluate the characteristics of the ferroelectrics with a buffer layer, the polarization-voltage characteristics of the capacitor, the transfer characteristics, and the retention characteristics of the transistors were investigated. As the capacitance of the buffer layer increased, high remnant polarization (), high hysteresis, and long retention times were observed. Exceptionally, when poly(methylmethacrylate) and rigid poly(aryl ether) (poly(9,9-bis(4-hydroxyphenyl)fluorene--decafluorobiphenyl)) were used as the buffer layer, had a value close to 0 in the dynamic measurement polarization-voltage (P-V) characteristic, but the quasi-static measurement transfer characteristic and the static measurement retention characteristic showed relatively high hysteresis and long retention times. Our study provides a scientific and technical basis for the design of ferroelectric memory and neuromorphic devices.
我们展示了缓冲层对铁电聚合物电容器和场效应晶体管电学特性的影响。使用介电常数在2到42之间的各种聚合物材料来形成厚度相似但电容不同的缓冲层。为了评估带有缓冲层的铁电体的特性，研究了电容器的极化-电压特性、晶体管的转移特性和保持特性。随着缓冲层电容的增加，观察到了高剩余极化（）、高滞后现象和长保持时间。例外的是，当聚（甲基丙烯酸甲酯）和刚性聚（芳基醚）（聚（9,9-双（4-羟基苯基）芴-十氟联苯））用作缓冲层时，在动态测量极化-电压（P-V）特性中 的值接近0，但准静态测量转移特性和静态测量保持特性显示出相对较高的滞后现象和长保持时间。我们的研究为铁电存储器和神经形态器件的设计提供了科学技术基础。
