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氧气分子在石墨烯和二维二硫化钨上的吸附能。

Adsorption energy of oxygen molecules on graphene and two-dimensional tungsten disulfide.

机构信息

Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka, 565-0871, Japan.

Department of Physics, Southern Illinois University-Carbondale, Carbondale, Illinois, 62901-4401, United States.

出版信息

Sci Rep. 2017 May 11;7(1):1774. doi: 10.1038/s41598-017-01883-1.

DOI:10.1038/s41598-017-01883-1
PMID:28496178
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5431967/
Abstract

Adsorption of gas molecules on the surface of atomically layered two-dimensional (2D) materials, including graphene and transition metal dichalcogenides, can significantly affect their electrical and optical properties. Therefore, a microscopic and quantitative understanding of the mechanism and dynamics of molecular adsorption and desorption has to be achieved in order to advance device applications based on these materials. However, recent theoretical calculations have yielded contradictory results, particularly on the magnitude of the adsorption energy. Here, we have experimentally determined the adsorption energy of oxygen molecules on graphene and 2D tungsten disulfide using temperature-programmed terahertz (THz) emission microscopy (TPTEM). The temperature dependence of THz emission from InP surfaces covered with 2D materials reflects the change in oxygen concentration due to thermal desorption, which we used to estimate the adsorption energy of oxygen molecules on graphene (0.15 eV) and tungsten disulphide (0.24 eV). Furthermore, we used TPTEM to visualize relative changes in the spatial distribution of oxygen molecules on monolayer graphene during adsorption and desorption. Our results provide much insight into the mechanism of molecular adsorption on the surface of 2D materials, while introducing TPTEM as a novel and powerful tool for molecular surface science.

摘要

气体分子在原子层状二维(2D)材料表面的吸附,包括石墨烯和过渡金属二硫属化物,会显著影响其电学和光学性质。因此,为了推进基于这些材料的器件应用,必须实现对分子吸附和解吸的机制和动力学的微观和定量理解。然而,最近的理论计算得出了相互矛盾的结果,特别是在吸附能的大小上。在这里,我们使用基于太赫兹(THz)发射的程序升温显微镜(TPTEM)实验确定了氧气分子在石墨烯和二维二硫化钨上的吸附能。二维材料覆盖的 InP 表面的太赫兹发射的温度依赖性反映了由于热解吸导致的氧气浓度的变化,我们用它来估计氧气分子在石墨烯(0.15eV)和二硫化钨(0.24eV)上的吸附能。此外,我们还使用 TPTEM 可视化了在吸附和解吸过程中单层石墨烯上氧气分子的空间分布的相对变化。我们的结果深入了解了分子在二维材料表面吸附的机制,同时将 TPTEM 作为一种新颖而强大的分子表面科学工具引入其中。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d3b5/5431967/a325d8f7eb0f/41598_2017_1883_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d3b5/5431967/341aea4f36d9/41598_2017_1883_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d3b5/5431967/f8b3ace2212f/41598_2017_1883_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d3b5/5431967/d2663e77982c/41598_2017_1883_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d3b5/5431967/29b450bab583/41598_2017_1883_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d3b5/5431967/a325d8f7eb0f/41598_2017_1883_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d3b5/5431967/341aea4f36d9/41598_2017_1883_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d3b5/5431967/f8b3ace2212f/41598_2017_1883_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d3b5/5431967/d2663e77982c/41598_2017_1883_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d3b5/5431967/29b450bab583/41598_2017_1883_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d3b5/5431967/a325d8f7eb0f/41598_2017_1883_Fig5_HTML.jpg

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