Department of Chemistry and Biochemistry, St. Mary's University , San Antonio, Texas 78228, United States.
J Am Chem Soc. 2017 Jun 14;139(23):7815-7822. doi: 10.1021/jacs.7b02054. Epub 2017 Jun 5.
The emerging generation of quantum dot optoelectronic devices offers an appealing prospect of a size-tunable band gap. The confinement-enabled control over electronic properties, however, requires nanoparticles to be sufficiently small, which leads to a large area of interparticle boundaries in a film. Such interfaces lead to a high density of surface traps which ultimately increase the electrical resistance of a solid. To address this issue, we have developed an inverse energy-gradient core/shell architecture supporting the quantum confinement in nanoparticles larger than the exciton Bohr radius. The assembly of such nanostructures exhibits a relatively low surface-to-volume ratio, which was manifested in this work through the enhanced conductance of solution-processed films. The reported core/shell geometry was realized by growing a narrow gap semiconductor layer (CdSe) on the surface of a wide-gap core material (CdS) promoting the localization of excitons in the shell domain, as was confirmed by ultrafast transient absorption and emission lifetime measurements. The band gap emission of fabricated nanoshells, ranging from 15 to 30 nm in diameter, has revealed a characteristic size-dependent behavior tunable via the shell thickness with associated quantum yields in the 4.4-16.0% range.
新兴的量子点光电设备为可调带隙提供了有吸引力的前景。然而,实现电子特性的受限控制需要纳米粒子足够小,这会导致薄膜中粒子间界面的面积很大。这种界面会导致表面陷阱的密度增加,从而增加固体的电阻。为了解决这个问题,我们开发了一种逆能量梯度核/壳结构,支持大于激子玻尔半径的纳米粒子中的量子限制。这种纳米结构的组装具有相对较低的表面积与体积比,这在这项工作中通过溶液处理薄膜的电导增强得到了体现。所报道的核/壳结构是通过在宽能隙核心材料(CdS)表面生长窄能隙半导体层(CdSe)来实现的,这促进了激子在壳层域中的局域化,这一点通过超快瞬态吸收和发射寿命测量得到了证实。所制备的纳米壳的带隙发射,直径范围为 15 至 30nm,具有特征的尺寸依赖性行为,可以通过壳厚度进行可调谐,其量子产率在 4.4-16.0%范围内。