Department of Chemical Sciences and Engineering, EPFL Valais Wallis, 1951, Sion, Switzerland.
Interdisciplinary Centre for Electron Microscopy (CIME), EPFL, 1015, Lausanne, Switzerland.
Angew Chem Int Ed Engl. 2017 Aug 28;56(36):10696-10701. doi: 10.1002/anie.201703703. Epub 2017 Jun 12.
Herein, the assembly of CsPbBr QD/AlO inorganic nanocomposites, by using atomic layer deposition (ALD) for the growth of the amorphous alumina matrix (AlO ), is described as a novel protection scheme for such QDs. The nucleation and growth of AlO on the QD surface was thoroughly investigated by miscellaneous techniques, which highlighted the importance of the interaction between the ALD precursors and the QD surface to uniformly coat the QDs while preserving the optoelectronic properties. These nanocomposites show exceptional stability towards exposure to air (for at least 45 days), irradiation under simulated solar spectrum conditions (for at least 8 h), and heat (up to 200 °C in air), and finally upon immersion in water. This method was extended to the assembly of CsPbBr I QD/AlO and CsPbI QD/AlO nanocomposites, which were more stable than the pristine QD films.
本文描述了一种通过原子层沉积（ALD）生长无定形氧化铝基质（AlO）来组装 CsPbBr QD/AlO 无机纳米复合材料的方法，这是一种保护此类 QD 的新方案。通过多种技术深入研究了 AlO 在 QD 表面的成核和生长，这突出了 ALD 前体与 QD 表面之间相互作用的重要性，这种相互作用可以在保持光电性能的同时，均匀地包覆 QD。这些纳米复合材料在暴露于空气（至少 45 天）、在模拟太阳光谱条件下辐照（至少 8 小时）以及在空气中加热（高达 200°C）时表现出异常的稳定性，最后在浸入水中时也是如此。该方法还扩展到 CsPbBr I QD/AlO 和 CsPbI QD/AlO 纳米复合材料的组装，它们比原始 QD 薄膜更稳定。
