SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea.
School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea.
Adv Mater. 2017 Aug;29(29). doi: 10.1002/adma.201606667. Epub 2017 Jun 6.
Recently, piezoelectricity has been observed in 2D atomically thin materials, such as hexagonal-boron nitride, graphene, and transition metal dichalcogenides (TMDs). Specifically, exfoliated monolayer MoS exhibits a high piezoelectricity that is comparable to that of traditional piezoelectric materials. However, monolayer TMD materials are not regarded as suitable for actual piezoelectric devices due to their insufficient mechanical durability for sustained operation while Bernal-stacked bilayer TMD materials lose noncentrosymmetry and consequently piezoelectricity. Here, it is shown that WSe bilayers fabricated via turbostratic stacking have reliable piezoelectric properties that cannot be obtained from a mechanically exfoliated WSe bilayer with Bernal stacking. Turbostratic stacking refers to the transfer of each chemical vapor deposition (CVD)-grown WSe monolayer to allow for an increase in degrees of freedom in the bilayer symmetry, leading to noncentrosymmetry in the bilayers. In contrast, CVD-grown WSe bilayers exhibit very weak piezoelectricity because of the energetics and crystallographic orientation. The flexible piezoelectric WSe bilayers exhibit a prominent mechanical durability of up to 0.95% of strain as well as reliable energy harvesting performance, which is adequate to drive a small liquid crystal display without external energy sources, in contrast to monolayer WSe for which the device performance becomes degraded above a strain of 0.63%.
最近,在二维原子薄材料中观察到了压电性,例如六方氮化硼、石墨烯和过渡金属二卤化物(TMDs)。具体来说,剥离的单层 MoS 表现出与传统压电材料相当的高压电性。然而,由于机械耐久性不足,无法持续运行,单层 TMD 材料不适用于实际的压电设备,而 Bernal 堆叠的双层 TMD 材料则失去了非中心对称和压电性。在这里,我们表明,通过扭曲堆积制造的 WSe 双层具有可靠的压电性能,而机械剥离的具有 Bernal 堆叠的 WSe 双层则无法获得。扭曲堆积是指每个化学气相沉积(CVD)生长的 WSe 单层的转移,以增加双层对称性中的自由度,从而导致双层的非中心对称。相比之下,由于能量学和晶体取向,CVD 生长的 WSe 双层表现出非常弱的压电性。柔性压电 WSe 双层表现出高达 0.95%应变的出色机械耐久性以及可靠的能量收集性能,足以驱动小型液晶显示器而无需外部能源,而对于单层 WSe,其器件性能在应变超过 0.63%时会下降。