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通过湿刻蚀控制 3 维介孔二氧化硅超薄膜的厚度。

Thickness control of 3-dimensional mesoporous silica ultrathin films by wet-etching.

机构信息

Department of Applied Chemistry, Faculty of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan.

出版信息

Nanoscale. 2017 Jun 22;9(24):8321-8329. doi: 10.1039/c7nr01560g.

Abstract

The thickness of 3-dimensional (3D) mesoporous silica ultrathin films was controlled at a single-nanometer scale by wet-etching. A drop casting method with an aqueous etchant of ammonium fluoride was effective in etching the surfaces of films in the direction perpendicular to their substrates. The decrease in the film thickness depends on the interface tension of etching solutions. The wettability of thin films also influences the etching. CoPt nanodots were electrodeposited within ultrathin silica films on Ru substrates to form CoPt nanodot patterns.

摘要

通过湿蚀刻将 3 维(3D)介孔硅超薄膜的厚度精确控制在单纳米尺度。采用带有氟化铵的去离子水作为刻蚀液的滴铸法可以有效地垂直于基底对薄膜表面进行各向异性刻蚀。薄膜厚度的减小取决于刻蚀溶液的界面张力。薄膜的润湿性也会影响刻蚀。在 Ru 基底上的超薄二氧化硅薄膜内电沉积 CoPt 纳米点以形成 CoPt 纳米点图案。

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