Micro-nano manufacturing and system integration center, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, People's Republic of China.
Nanotechnology. 2017 Jul 7;28(27):275203. doi: 10.1088/1361-6528/aa7473.
Two-dimensional molybdenum disulfide (MoS) is a promising material for ultrasensitive photodetectors owing to its tunable band gap and high absorption coefficient. However, controlled synthesis of high-quality, large-area monolayer molybdenum disulfide (MoS) is still a challenge in practical application. In this work, we report a gold foil assistant chemical vapor deposition method for the synthesis of large-size (>400 μm) single-crystal MoS film on a silicon dioxide (SiO) substrate. The influence of Au foil in enlarging the size of single-crystal MoS is investigated systemically using thermal simulation in Ansys workbench 16.0, including thermal conductivity, temperature difference and thermal relaxation time of the interface of SiO substrate and Au foil, which indicate that Au foil can increase the temperature of the SiO substrate rapidly and decrease the temperature difference between the oven and substrate. Finally, the properties of the monolayer MoS film are further confirmed using back-gated field-effect transistors: a high photoresponse of 15.6 A W and a fast photoresponse time of 100 ms. The growth techniques described in this study could be beneficial for the development of other atomically thin two-dimensional transition metal dichalcogenide materials.
二维二硫化钼（MoS）由于其可调带隙和高吸收系数，是用于超高灵敏度光探测器的一种很有前途的材料。然而，在实际应用中，控制合成高质量、大面积的单层二硫化钼（MoS）仍然是一个挑战。在这项工作中，我们报告了一种使用金箔辅助化学气相沉积法在二氧化硅（SiO）衬底上合成大尺寸（>400 μm）单晶 MoS 膜的方法。使用 Ansys workbench 16.0 中的热模拟系统地研究了 Au 箔在增大单晶 MoS 尺寸方面的影响，包括 SiO 衬底和 Au 箔界面的热导率、温差和热弛豫时间，结果表明 Au 箔可以快速提高 SiO 衬底的温度，并降低炉体和衬底之间的温差。最后，使用背栅场效应晶体管进一步证实了单层 MoS 膜的性能：高光响应度为 15.6 A W，快速光响应时间为 100 ms。本研究中描述的生长技术可能有助于其他原子层薄二维过渡金属二硫属化物材料的发展。
