• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

通过选择性掺杂实现的基于卷对卷工艺制备的单壁碳纳米管晶体管的类丝状 CMOS 逻辑电路。

Thread-Like CMOS Logic Circuits Enabled by Reel-Processed Single-Walled Carbon Nanotube Transistors via Selective Doping.

机构信息

School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06980, South Korea.

Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, South Korea.

出版信息

Adv Mater. 2017 Aug;29(31). doi: 10.1002/adma.201701822. Epub 2017 Jun 19.

DOI:10.1002/adma.201701822
PMID:28628230
Abstract

The realization of large-area electronics with full integration of 1D thread-like devices may open up a new era for ultraflexible and human adaptable electronic systems because of their potential advantages in demonstrating scalable complex circuitry by a simply integrated weaving technology. More importantly, the thread-like fiber electronic devices can be achieved using a simple reel-to-reel process, which is strongly required for low-cost and scalable manufacturing technology. Here, high-performance reel-processed complementary metal-oxide-semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates by using selectively chemical-doped single-walled carbon nanotube (SWCNT) transistors. With the introduction of selective n-type doping and a nonrelief photochemical patterning process, p- and n-type SWCNT transistors are successfully implemented on cylindrical fiber substrates under air ambient, enabling high-performance and reliable thread-like CMOS inverter circuits. In addition, it is noteworthy that the optimized reel-coating process can facilitate improvement in the arrangement of SWCNTs, building uniformly well-aligned SWCNT channels, and enhancement of the electrical performance of the devices. The p- and n-type SWCNT transistors exhibit field-effect mobility of 4.03 and 2.15 cm V s , respectively, with relatively narrow distribution. Moreover, the SWCNT CMOS inverter circuits demonstrate a gain of 6.76 and relatively good dynamic operation at a supply voltage of 5.0 V.

摘要

通过简单的集成编织技术,实现具有 1D 线状器件全集成的大面积电子器件,有望为超灵活和与人适配的电子系统开创一个新时代,因为它们在展示可扩展的复杂电路方面具有潜在优势。更重要的是,线状纤维电子器件可以使用简单的卷对卷工艺来实现,这对于低成本和可扩展的制造技术来说是非常需要的。在这里,通过选择性化学掺杂的单壁碳纳米管 (SWCNT) 晶体管,在 1D 纤维衬底上报告了高性能卷对卷处理互补金属氧化物半导体 (CMOS) 集成电路。通过引入选择性 n 型掺杂和非 Relief 光化学图案化工艺,在空气环境下成功地在圆柱形纤维衬底上实现了 p 型和 n 型 SWCNT 晶体管,从而实现了高性能和可靠的线状 CMOS 逆变器电路。此外,值得注意的是,优化的卷涂工艺可以促进 SWCNTs 的排列改善,构建均匀的、良好对准的 SWCNT 通道,并提高器件的电性能。p 型和 n 型 SWCNT 晶体管的场效应迁移率分别为 4.03 和 2.15 cm V s ,具有相对较窄的分布。此外,SWCNT CMOS 逆变器电路在 5.0 V 的电源电压下表现出 6.76 的增益和相对较好的动态工作。

相似文献

1
Thread-Like CMOS Logic Circuits Enabled by Reel-Processed Single-Walled Carbon Nanotube Transistors via Selective Doping.通过选择性掺杂实现的基于卷对卷工艺制备的单壁碳纳米管晶体管的类丝状 CMOS 逻辑电路。
Adv Mater. 2017 Aug;29(31). doi: 10.1002/adma.201701822. Epub 2017 Jun 19.
2
Stable Logic Operation of Fiber-Based Single-Walled Carbon Nanotube Transistor Circuits Toward Thread-Like CMOS Circuitry.面向类线程互补金属氧化物半导体电路的基于光纤的单壁碳纳米管晶体管电路的稳定逻辑运算
Materials (Basel). 2018 Oct 1;11(10):1878. doi: 10.3390/ma11101878.
3
Selective Conversion from p-Type to n-Type of Printed Bottom-Gate Carbon Nanotube Thin-Film Transistors and Application in Complementary Metal-Oxide-Semiconductor Inverters.印刷底栅碳纳米管薄膜晶体管从 p 型到 n 型的选择性转换及其在互补金属氧化物半导体反相器中的应用。
ACS Appl Mater Interfaces. 2017 Apr 12;9(14):12750-12758. doi: 10.1021/acsami.7b01666. Epub 2017 Mar 30.
4
Subnanowatt carbon nanotube complementary logic enabled by threshold voltage control.亚纳瓦级碳纳米管互补逻辑由阈值电压控制实现。
Nano Lett. 2013 Oct 9;13(10):4810-4. doi: 10.1021/nl402478p. Epub 2013 Sep 12.
5
Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based On Two-Layer Stacks of Single-Walled Carbon Nanotube Networks.基于双层堆叠单壁碳纳米管网络的三维柔性互补金属氧化物半导体逻辑电路。
ACS Nano. 2016 Feb 23;10(2):2193-202. doi: 10.1021/acsnano.5b06726. Epub 2016 Jan 19.
6
High-Purity Semiconducting Single-Walled Carbon Nanotubes: A Key Enabling Material in Emerging Electronics.高纯度半导体单壁碳纳米管:新兴电子学中的关键使能材料。
Acc Chem Res. 2017 Oct 17;50(10):2479-2486. doi: 10.1021/acs.accounts.7b00234. Epub 2017 Sep 13.
7
Fully-Solution-Processed Enhancement-Mode Complementary Metal-Oxide-Semiconductor Carbon Nanotube Thin Film Transistors Based on BiI -Doped Crosslinked Poly(4-Vinylphenol) Dielectrics for Ultralow-Power Flexible Electronics.基于碘化铋掺杂交联聚(4-乙烯基苯酚)电介质的全溶液处理增强型互补金属氧化物半导体碳纳米管薄膜晶体管用于超低功耗柔性电子器件
Small. 2023 May;19(20):e2207311. doi: 10.1002/smll.202207311. Epub 2023 Feb 13.
8
Solution-processed carbon nanotube thin-film complementary static random access memory.溶液处理碳纳米管薄膜互补静态随机存取存储器。
Nat Nanotechnol. 2015 Nov;10(11):944-8. doi: 10.1038/nnano.2015.197. Epub 2015 Sep 7.
9
Radiation-Hard Complementary Integrated Circuits Based on Semiconducting Single-Walled Carbon Nanotubes.基于半导体单壁碳纳米管的辐射硬化互补集成电路。
ACS Nano. 2017 Mar 28;11(3):2992-3000. doi: 10.1021/acsnano.6b08561. Epub 2017 Feb 21.
10
Metal contact engineering and registration-free fabrication of complementary metal-oxide semiconductor integrated circuits using aligned carbon nanotubes.使用对齐的碳纳米管的金属接触工程和无注册互补金属氧化物半导体集成电路的制造。
ACS Nano. 2011 Feb 22;5(2):1147-53. doi: 10.1021/nn1027856. Epub 2011 Jan 27.

引用本文的文献

1
Recent progress of fiber-based transistors: materials, structures and applications.基于纤维的晶体管的最新进展:材料、结构与应用
Front Optoelectron. 2022 Mar 29;15(1):2. doi: 10.1007/s12200-022-00002-x.
2
Conformally Gated Surface Conducting Behaviors of Single-Walled Carbon Nanotube Thin-Film-Transistors.单壁碳纳米管薄膜晶体管的共形门控表面传导行为
Materials (Basel). 2021 Jun 17;14(12):3361. doi: 10.3390/ma14123361.
3
Challenges in Design and Fabrication of Flexible/Stretchable Carbon- and Textile-Based Wearable Sensors for Health Monitoring: A Critical Review.
用于健康监测的柔性/拉伸碳基和纺织基可穿戴传感器的设计和制造挑战:批判性回顾。
Sensors (Basel). 2020 Jul 15;20(14):3927. doi: 10.3390/s20143927.
4
Bottom-Gate Approach for All Basic Logic Gates Implementation by a Single-Type IGZO-Based MOS Transistor with Reduced Footprint.基于单一类型的铟镓锌氧化物(IGZO)金属氧化物半导体晶体管实现所有基本逻辑门的底栅方法,具有更小的占地面积。
Adv Sci (Weinh). 2020 Jan 24;7(6):1901224. doi: 10.1002/advs.201901224. eCollection 2020 Mar.
5
Stable Logic Operation of Fiber-Based Single-Walled Carbon Nanotube Transistor Circuits Toward Thread-Like CMOS Circuitry.面向类线程互补金属氧化物半导体电路的基于光纤的单壁碳纳米管晶体管电路的稳定逻辑运算
Materials (Basel). 2018 Oct 1;11(10):1878. doi: 10.3390/ma11101878.