School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06980, South Korea.
Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, South Korea.
Adv Mater. 2017 Aug;29(31). doi: 10.1002/adma.201701822. Epub 2017 Jun 19.
The realization of large-area electronics with full integration of 1D thread-like devices may open up a new era for ultraflexible and human adaptable electronic systems because of their potential advantages in demonstrating scalable complex circuitry by a simply integrated weaving technology. More importantly, the thread-like fiber electronic devices can be achieved using a simple reel-to-reel process, which is strongly required for low-cost and scalable manufacturing technology. Here, high-performance reel-processed complementary metal-oxide-semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates by using selectively chemical-doped single-walled carbon nanotube (SWCNT) transistors. With the introduction of selective n-type doping and a nonrelief photochemical patterning process, p- and n-type SWCNT transistors are successfully implemented on cylindrical fiber substrates under air ambient, enabling high-performance and reliable thread-like CMOS inverter circuits. In addition, it is noteworthy that the optimized reel-coating process can facilitate improvement in the arrangement of SWCNTs, building uniformly well-aligned SWCNT channels, and enhancement of the electrical performance of the devices. The p- and n-type SWCNT transistors exhibit field-effect mobility of 4.03 and 2.15 cm V s , respectively, with relatively narrow distribution. Moreover, the SWCNT CMOS inverter circuits demonstrate a gain of 6.76 and relatively good dynamic operation at a supply voltage of 5.0 V.
通过简单的集成编织技术,实现具有 1D 线状器件全集成的大面积电子器件,有望为超灵活和与人适配的电子系统开创一个新时代,因为它们在展示可扩展的复杂电路方面具有潜在优势。更重要的是,线状纤维电子器件可以使用简单的卷对卷工艺来实现,这对于低成本和可扩展的制造技术来说是非常需要的。在这里,通过选择性化学掺杂的单壁碳纳米管 (SWCNT) 晶体管,在 1D 纤维衬底上报告了高性能卷对卷处理互补金属氧化物半导体 (CMOS) 集成电路。通过引入选择性 n 型掺杂和非 Relief 光化学图案化工艺,在空气环境下成功地在圆柱形纤维衬底上实现了 p 型和 n 型 SWCNT 晶体管,从而实现了高性能和可靠的线状 CMOS 逆变器电路。此外,值得注意的是,优化的卷涂工艺可以促进 SWCNTs 的排列改善,构建均匀的、良好对准的 SWCNT 通道,并提高器件的电性能。p 型和 n 型 SWCNT 晶体管的场效应迁移率分别为 4.03 和 2.15 cm V s ,具有相对较窄的分布。此外,SWCNT CMOS 逆变器电路在 5.0 V 的电源电压下表现出 6.76 的增益和相对较好的动态工作。