Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA.
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USA.
Nat Nanotechnol. 2015 Nov;10(11):944-8. doi: 10.1038/nnano.2015.197. Epub 2015 Sep 7.
Over the past two decades, extensive research on single-walled carbon nanotubes (SWCNTs) has elucidated their many extraordinary properties, making them one of the most promising candidates for solution-processable, high-performance integrated circuits. In particular, advances in the enrichment of high-purity semiconducting SWCNTs have enabled recent circuit demonstrations including synchronous digital logic, flexible electronics and high-frequency applications. However, due to the stringent requirements of the transistors used in complementary metal-oxide-semiconductor (CMOS) logic as well as the absence of sufficiently stable and spatially homogeneous SWCNT thin-film transistors, the development of large-scale SWCNT CMOS integrated circuits has been limited in both complexity and functionality. Here, we demonstrate the stable and uniform electronic performance of complementary p-type and n-type SWCNT thin-film transistors by controlling adsorbed atmospheric dopants and incorporating robust encapsulation layers. Based on these complementary SWCNT thin-film transistors, we simulate, design and fabricate arrays of low-power static random access memory circuits, achieving large-scale integration for the first time based on solution-processed semiconductors.
在过去的二十年中，对单壁碳纳米管（SWCNT）的广泛研究阐明了它们许多非凡的性质，使它们成为最有前途的溶液处理型高性能集成电路候选材料之一。特别是，高纯度半导体 SWCNT 的富集方面的进展使得最近的电路演示成为可能，包括同步数字逻辑、柔性电子和高频应用。然而，由于互补金属氧化物半导体（CMOS）逻辑中使用的晶体管的严格要求，以及没有足够稳定和空间均匀的 SWCNT 薄膜晶体管，大规模 SWCNT CMOS 集成电路的发展在复杂性和功能方面受到限制。在这里，我们通过控制吸附的大气掺杂剂并结合坚固的封装层来展示互补 p 型和 n 型 SWCNT 薄膜晶体管的稳定和均匀的电子性能。基于这些互补的 SWCNT 薄膜晶体管，我们模拟、设计和制造了低功耗静态随机存取存储器电路的阵列，首次实现了基于溶液处理半导体的大规模集成。
