State Key Laboratory for Microscopic Physics, School of Physics, Peking University , Beijing 100871, China.
State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University , Hangzhou 310027, China.
ACS Appl Mater Interfaces. 2017 Jul 19;9(28):24005-24010. doi: 10.1021/acsami.7b02026. Epub 2017 Jul 3.
A new method to employ graphene as top electrode was introduced, and based on that, fully transparent quantum dot light-emitting diodes (T-QLEDs) were successfully fabricated through a lamination process. We adopted the widely used wet transfer method to transfer bilayer graphene (BG) on polydimethylsiloxane/polyethylene terephthalate (PDMS/PET) substrate. The sheet resistance of graphene reduced to ∼540 Ω/□ through transferring BG for 3 times on the PDMS/PET. The T-QLED has an inverted device structure of glass/indium tin oxide (ITO)/ZnO nanoparticles/(CdSSe/ZnS quantum dots (QDs))/1,1-bis[(di-4-tolylamino)phenyl] cyclohexane (TAPC)/MoO/graphene/PDMS/PET. The graphene anode on PDMS/PET substrate can be directly laminated on the MoO/TAPC/(CdSSe/ZnS QDs)/ZnO nanoparticles/ITO/glass, which relied on the van der Waals interaction between the graphene/PDMS and the MoO. The transmittance of the T-QLED is 79.4% at its main electroluminescence peak wavelength of 622 nm.
引入了一种将石墨烯用作顶电极的新方法，并在此基础上，通过层压工艺成功制备了完全透明的量子点发光二极管（T-QLED）。我们采用了广泛使用的湿法转移方法，将双层石墨烯（BG）转移到聚二甲基硅氧烷/聚对苯二甲酸乙二醇酯（PDMS/PET）基底上。通过在 PDMS/PET 上转移 BG 三次，石墨烯的方阻降低到约 540 Ω/□。T-QLED 具有玻璃/铟锡氧化物（ITO）/氧化锌纳米粒子/（CdSSe/ZnS 量子点（QDs））/1,1-双[（二-4-甲苯基氨基）苯基]环己烷（TAPC）/MoO/石墨烯/PDMS/PET 的倒置器件结构。PDMS/PET 基底上的石墨烯阳极可以直接层压在 MoO/TAPC/（CdSSe/ZnS QDs）/氧化锌纳米粒子/ITO/玻璃上，这依赖于石墨烯/PDMS 和 MoO 之间的范德华相互作用。T-QLED 在其主电致发光峰波长为 622nm 时的透光率为 79.4%。
