Korea Advanced Nano Fab Center (KANC), 109 Gwanggyo-Ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-270, Republic of Korea.
Department of Electronic Engineering, Kwangwoon University, 20 Gwangun-Ro, Nowon-gu, Seoul, 139701, Republic of Korea.
Sci Rep. 2017 Jun 20;7(1):3915. doi: 10.1038/s41598-017-04389-y.
This study presents a detailed fabrication method, together with validation, discussion, and analysis, for state-of-the-art silicon carbide (SiC) etching of vertical and bevelled structures by using inductively coupled plasma reactive ion etching (ICP-RIE) for microelectronic applications. Applying different gas mixtures, a maximum bevel angle of 87° (almost vertical), large-angle bevels ranging from 40° to 80°, and small-angel bevels ranging from 7° to 17° were achieved separately using distinct gas mixtures at different ratios. We found that SF with additive O was effective for vertical etching, with a best etching rate of 3050 Å/min. As for the large-angle bevel structures, BCl + N gas mixtures show better characteristics, exhibiting a controllable and large etching angle range from 40° to 80° through the adjustment of the mixture ratio. Additionally, a Cl + O mixture at different ratios is applied to achieve a small-angel bevels ranging from 7° to 17°. A minimum bevel angel of approximately 7° was achieved under the specific volume of 2.4 sccm Cl and 3.6 sccm O. These results can be used to improve performance in various microelectronic applications including MMIC via holes, PIN diodes, Schottky diodes, JFETs' bevel mesa, and avalanche photodiode fabrication.
本研究提出了一种详细的制造方法，以及对微电子应用中使用感应耦合等离子体反应离子刻蚀（ICP-RIE）对垂直和倾斜结构的碳化硅（SiC）进行先进刻蚀的验证、讨论和分析。通过使用不同的气体混合物，在不同的比例下使用不同的气体混合物分别实现了最大 87°的倾斜角（几乎垂直）、40°至 80°的大角度倾斜和 7°至 17°的小角度倾斜。我们发现，SF 与添加剂 O 一起用于垂直刻蚀是有效的，最佳刻蚀速率为 3050 Å/min。对于大角度倾斜结构，BCl + N 气体混合物表现出更好的特性，通过调整混合物的比例，可以实现可控的大刻蚀角度范围从 40°到 80°。此外，通过使用不同比例的 Cl + O 混合物，可以实现 7°至 17°的小角度倾斜。在特定的体积为 2.4 sccm Cl 和 3.6 sccm O 的情况下，可以实现最小的倾斜角约为 7°。这些结果可用于提高各种微电子应用的性能，包括 MMIC 通孔、PIN 二极管、肖特基二极管、JFET 的倾斜台面和雪崩光电二极管制造。
