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碳化硅技术概述：现状、挑战、关键驱动因素及产品路线图。

The Overview of Silicon Carbide Technology: Status, Challenges, Key Drivers, and Product Roadmap.

作者信息

Kamiński Maciej, Król Krystian, Kwietniewski Norbert, Myśliwiec Marcin, Sochacki Mariusz, Stonio Bartłomiej, Kisiel Ryszard, Martychowiec Agnieszka, Racka-Szmidt Katarzyna, Werbowy Aleksander, Żelazko Jarosław, Niedzielski Piotr, Szmidt Jan, Strójwąs Andrzej

机构信息

Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa Str., 00-662 Warsaw, Poland.

Łukasiewicz Research Network-Institute of Microelectronics and Photonics, 32/46 Al. Lotników, 02-668 Warsaw, Poland.

出版信息

Materials (Basel). 2024 Dec 24;18(1):12. doi: 10.3390/ma18010012.

DOI:10.3390/ma18010012
PMID:39795657
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11721906/
Abstract

Arguably, SiC technology is the most rapidly expanding IC manufacturing technology driven mostly by the aggressive roadmap for battery electric vehicle penetration and also industrial high-voltage/high-power applications. This paper provides a comprehensive overview of the state of the art of SiC technology focusing on the challenges starting from the difficult and lengthy SiC substrate growth all the way to the complex MOSFET assembly processes. We focus on the differentiation from the established Si manufacturing processes and provide a comprehensive list of references as well as a brief description of our own research into the key manufacturing processes in this technology. We also present a SiC technology and product roadmap.

摘要

可以说，碳化硅（SiC）技术是发展最为迅速的集成电路制造技术，这主要得益于电池电动汽车普及的激进路线图以及工业高压/高功率应用。本文全面概述了SiC技术的现状，重点关注从困难且漫长的SiC衬底生长到复杂的MOSFET组装工艺等一系列挑战。我们着重阐述了与成熟的硅制造工艺的差异，提供了一份全面的参考文献列表，并简要介绍了我们自己对该技术关键制造工艺的研究。我们还展示了一份SiC技术和产品路线图。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6455/11721906/8949e1235409/materials-18-00012-g021.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6455/11721906/50d572ec86dc/materials-18-00012-g001.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6455/11721906/3e0265ecfeda/materials-18-00012-g007.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6455/11721906/cb9d23d4822e/materials-18-00012-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6455/11721906/00daedc4d5cc/materials-18-00012-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6455/11721906/69376938f5e5/materials-18-00012-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6455/11721906/d5cdaae4c7b4/materials-18-00012-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6455/11721906/15b8fd2bf384/materials-18-00012-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6455/11721906/e1eb85b80b1f/materials-18-00012-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6455/11721906/07120c3638fb/materials-18-00012-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6455/11721906/bf8f388a979c/materials-18-00012-g015.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6455/11721906/a26d147904e1/materials-18-00012-g016.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6455/11721906/12afd0528b45/materials-18-00012-g017.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6455/11721906/af4f0ff4f999/materials-18-00012-g018.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6455/11721906/91f61a2b0412/materials-18-00012-g019.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6455/11721906/f1e05eb08775/materials-18-00012-g020.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6455/11721906/8949e1235409/materials-18-00012-g021.jpg

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本文引用的文献

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Carrier Trap Density Reduction at SiO/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres.通过在磷酰氯和氮氧化物气氛中进行退火工艺降低SiO/4H-碳化硅界面处的载流子陷阱密度
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