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通过电动力学光刻实现亚 50nm 图案化的创新方案。

An innovative scheme for sub-50 nm patterning via electrohydrodynamic lithography.

机构信息

Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon 34103, Republic of Korea.

出版信息

Nanoscale. 2017 Aug 24;9(33):11881-11887. doi: 10.1039/c7nr00749c.

Abstract

The fabrication of large-area and well-ordered nanostructures using lithographic techniques is challenging. We have developed novel approaches for sub-50 nm nanopatterning using an electrohydrodynamic lithography (EHL) technique by tailoring experimental parameters such as applied voltage, stamp features, filling ratio, and choice of resist film. We obtain a sub-50 nm pattern replica from a master stamp that contains an array of line patterns having 50 nm widths. Moreover, we show that a far-smaller pattern replication than the original pattern size can be readily obtained by carefully adjusting the experimental conditions. Perfect- and much smaller-pattern replicas have been realized from the master stamp with an array of hole patterns having a 400 nm hole size by tuning the filling ratio. We also demonstrate that an array of 30 nm graphene nanoribbons can be easily fabricated by exploring a hierarchical core-shell template structure employing a bilayer resist film via an EHL technique. The proposed minimal-contact patterning method is simple, versatile, and inexpensive and has potential to become a powerful technique for realizing feasible ultrafine nanostructures on a wafer scale.

摘要

使用光刻技术制造大面积、有序的纳米结构具有挑战性。我们通过调整实验参数,如施加电压、压印模板特征、填充比和抗蚀剂膜的选择,开发了用于亚 50nm 纳米图案化的新型电动力学光刻 (EHL) 技术。我们从包含 50nm 宽度线图案阵列的母版印章获得亚 50nm 的图案复制品。此外,我们表明,通过仔细调整实验条件,可以很容易地获得比原始图案尺寸小得多的图案复制。通过调整填充比,我们还实现了具有 400nm 孔径的孔图案阵列的母版印章的完美图案和更小的图案复制品。我们还通过使用双层抗蚀剂膜探索分层核壳模板结构,展示了通过 EHL 技术轻松制造 30nm 石墨烯纳米带阵列的方法。所提出的最小接触图案化方法简单、通用且成本低廉,有望成为在晶圆级实现可行的超精细纳米结构的强大技术。

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