Yasuda Satoshi, Takahashi Ryosuke, Osaka Ryo, Kumagai Ryota, Miyata Yasumitsu, Okada Susumu, Hayamizu Yuhei, Murakoshi Kei
Department of Chemistry, Faculty of Science, Hokkaido University, Sapporo, Hokkaido, 060-0810, Japan.
Advanced Science Research Center, Japan Atomic Energy Agency, 2-4 Shirakata, Tokai, Ibaraki, 319-1195, Japan.
Small. 2017 Aug;13(31). doi: 10.1002/smll.201700748. Epub 2017 Jun 22.
Making contact of transition metal dichalcogenides (TMDCs) with a metal surface is essential for fabricating and designing electronic devices and catalytic systems. It also generates strain in the TMDCs that plays significant role in both electronic and phonon structures. Therefore, detailed understanding of mechanism of the strain generation is important to fully comprehend the modulation effect for the electronic and phonon properties. Here, MoS and MoSe monolayers are grown on Au surface by chemical vapor deposition and it is demonstrated that the contact with a crystalline Au(111) surface gives rise to only out-of-plane strain in both MoS and MoSe layers, whereas no strain generation is observed on polycrystalline Au or SiO /Si surfaces. Scanning tunneling microscopy analysis provides information regarding consequent specific adsorption sites between lower S (Se) atoms in the SMoS (SeMoSe) structure and Au atoms via unique moiré superstructure formation for MoS and MoSe layers on Au(111). This observation indicates that the specific adsorption sites give rise to out-of-plane strain in the TMDC layers. Furthermore, it also leads to effective modulation of the electronic structure of the MoS or MoSe layer.
过渡金属二硫属化物(TMDCs)与金属表面的接触对于制造和设计电子器件及催化系统至关重要。它还会在TMDCs中产生应变,这种应变在电子和声子结构中都起着重要作用。因此,详细了解应变产生的机制对于全面理解对电子和声子性质的调制效应很重要。在此,通过化学气相沉积在金表面生长了MoS和MoSe单层,结果表明,与晶体Au(111)表面的接触仅在MoS和MoSe层中产生面外应变,而在多晶金或SiO/Si表面上未观察到应变产生。扫描隧道显微镜分析通过在Au(111)上的MoS和MoSe层形成独特的莫尔超结构,提供了有关SMoS(SeMoSe)结构中较低的S(Se)原子与Au原子之间相应特定吸附位点的信息。这一观察结果表明,特定吸附位点在TMDC层中产生面外应变。此外,它还导致对MoS或MoSe层电子结构的有效调制。