Zhuiykov Serge, Akbari Mohammad Karbalaei, Hai Zhenyin, Xue Chenyang, Xu Hongyan, Hyde Lachlan
Ghent University Global Campus, Faculty of Bioscience Engineering, Incheon, South Korea.
Key Laboratory of Instrumentation Science and Dynamic Measurement of Ministry of Education, North University of China, 030051, PR China.
Data Brief. 2017 Jun 9;13:401-407. doi: 10.1016/j.dib.2017.06.013. eCollection 2017 Aug.
The data and complementary information presented hare are related to the research article of "http://dx.doi.org/10.1016/j.matdes.2017.02.016; Materials and Design 120 (2017) 99-108" [1]. The article provides data and information on the case of atomic layer deposition (ALD) of ultra-thin two-dimensional TiO film. The chemical structure of precursors, and the fabrication process were illustrated. The data of spectral ellipsometric measurements and the methods of calculations were presented. Data of root mean square roughness and the average roughness of the ADL TiO film are presented. The method of bandgap measurements and the bandgap calculation are also explained in the present data article.
此处呈现的数据及补充信息与“http://dx.doi.org/10.1016/j.matdes.2017.02.016;《材料与设计》120 (2017) 99 - 108”[1]的研究文章相关。该文章提供了关于超薄二维TiO薄膜原子层沉积(ALD)案例的数据和信息。阐述了前驱体的化学结构及制备工艺。给出了光谱椭偏测量数据及计算方法。呈现了ALD TiO薄膜的均方根粗糙度和平均粗糙度数据。本数据文章还解释了带隙测量方法及带隙计算。